您好,欢迎来到尚车旅游网。
搜索
您的当前位置:首页METHOD FOR FORMING A THIN-FILM TRANSISTOR

METHOD FOR FORMING A THIN-FILM TRANSISTOR

来源:尚车旅游网
专利内容由知识产权出版社提供

专利名称:METHOD FOR FORMING A THIN-FILM

TRANSISTOR

发明人:Naoyuki Toyoda申请号:US11425159申请日:20060620

公开号:US20070020821A1公开日:20070125

专利附图:

摘要:A method for forming a thin-film transistor includes forming a source electrodeand a drain electrode on an element-side substrate, forming a semiconductor layer incontact with the source electrode and the drain electrode, forming a gate insulating layer

overlaid on the semiconductor layer, and forming a gate electrode overlaid on the gateinsulating layer, wherein the semiconductor layer is formed over a laser process at thestep of forming the semiconductor layer in contact with the source electrode and thedrain electrode.

申请人:Naoyuki Toyoda

地址:Suwa 392-8502 JP

国籍:JP

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- sceh.cn 版权所有 湘ICP备2023017654号-4

违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务