专利名称:METHOD FOR FORMING A THIN-FILM
TRANSISTOR
发明人:Naoyuki Toyoda申请号:US11425159申请日:20060620
公开号:US20070020821A1公开日:20070125
专利附图:
摘要:A method for forming a thin-film transistor includes forming a source electrodeand a drain electrode on an element-side substrate, forming a semiconductor layer incontact with the source electrode and the drain electrode, forming a gate insulating layer
overlaid on the semiconductor layer, and forming a gate electrode overlaid on the gateinsulating layer, wherein the semiconductor layer is formed over a laser process at thestep of forming the semiconductor layer in contact with the source electrode and thedrain electrode.
申请人:Naoyuki Toyoda
地址:Suwa 392-8502 JP
国籍:JP
更多信息请下载全文后查看
因篇幅问题不能全部显示,请点此查看更多更全内容
Copyright © 2019- sceh.cn 版权所有 湘ICP备2023017654号-4
违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com
本站由北京市万商天勤律师事务所王兴未律师提供法律服务