Method for constructing a metal oxide semiconducto

专利名称：Method for constructing a metal oxide

semiconductor field effect transistor

发明人：Gregory E. Howard,Jeffrey Babcock,Angelo

Pinto

申请号：US10020604申请日：20011214

公开号：US20020081792A1公开日：20020627

专利附图：

摘要：A semiconductor device () and a method for constructing a semiconductordevice () are disclosed. A trench isolation structure () and an active region () are formed

proximate an outer surface of a semiconductor layer (). An epitaxial layer () is depositedoutwardly from the trench isolation structure (). A first insulator layer () and a secondinsulator layer () are grown proximate to the epitaxial layer (). A gate stack () thatincludes portions of the first insulator layer (and the second insulator layer () is formedoutwardly from the epitaxial layer (). The gate stack () also includes a gate () with anarrow region () and a wide region () formed proximate the second insulator layer (. Theepitaxial layer () is heated to a temperature sufficient to allow for the epitaxial layer () toform a source/drain implant region () in the active region ().

申请人：HOWARD GREGORY E.,BABCOCK JEFFREY,PINTO ANGELO

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