专利名称:Semiconductor integrated circuit with
circuits for generating stable referencepotential
发明人:Shigeki Ohbayashi,Atsushi Ohba,Kenji Anami申请号:US07/680185申请日:19910403公开号:US05223744A公开日:19930629
摘要:A semiconductor integrated circuit includes a plurality of emitter- coupled logic(ECL) circuits (10) and circuitry (5, 6a, 6b) generating a reference potential to determinethe logic threshold value of the ECL circuits. The reference potential generating circuitryis provided near a first pad (2) for a first supply voltage (VCC) and includes a circuit (5) forgenerating a first reference potential from the first supply voltage, and a circuit (6a, 6b)provided one for each the group of ECL circuits and provided near an associated ECLcircuit group for generating a second reference potential from the first referencepotential to generate a reference potential as the logic threshold potential of acorresponding ECL circuit. The semiconductor integrated circuit further includes a firstclamping potential generating circuit (16) provided near the first pad for generating afirst clamping potential in response to the first supply voltage, and a first clamping circuit(113) for clamping the potential at a node of current/voltage converting resistanceelement (205, 206) included in the ECL circuits at a first voltage in response to the firstclamping potential.
申请人:MITSUBISHI DENKI KABUSHIKI KAISHA
代理机构:Lowe, Price, LeBlanc & Becker
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