0.5–12 GHz General PurposeGallium Arsenide FETTechnical Data
ATF-10736
Features
•High Associated Gain:13.0␣dB Typical at 4␣GHz•Low Bias:
VDS = 2 V, IDS = 25␣mA
•High Output Power:
20.0␣dBm typical P1 dB at 4␣GHz•Low Noise Figure:1.2␣dB Typical at 4␣GHz•Cost Effective CeramicMicrostrip Package•Tape-and-Reel PackagingOption Available[1]
Description
The ATF-10736 is a high perfor-mance gallium arsenide Schottky-barrier-gate field effect transistorhoused in a cost effectivemicrostrip package. Its noise
figure makes this device appropri-ate for use in the gain stages oflow noise amplifiers operating inthe 0.5-12 GHz frequency range.This GaAs FET device has anominal 0.3 micron gate lengthusing airbridge interconcnectsbetween drain fingers. Total gateperiphery is 500 microns. Provengold based metallization systemsand nitride passivation assure arugged, reliable device.
36 micro-X Package
Electrical Specifications, TA = 25°C
SymbolNFO
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHzf = 4.0 GHzf = 6.0 GHzf = 2.0 GHzf = 4.0 GHzf = 6.0 GHzf = 4.0 GHzf = 4.0 GHz
Units Min.dBdBdBdBdBdBdBmdBmmhomAV
7070-4.012.0
Typ. Max.0.91.21.416.513.010.520.012.0140130-1.3
180-0.51.4
GAGain @ NFO; VDS = 2 V, IDS = 25 mA
P1 dBG1 dBgmIDSSVP
Power Output @ 1 dB Gain CompressionVDS = 4 V, IDS = 70 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mATransconductance: VDS = 2 V, VGS = 0 VSaturated Drain Current: VDS = 2 V, VGS = 0 VPinchoff Voltage: VDS = 2 V, IDS = 1 mA
Note:
1.Refer to PACKAGING section, “Tape-and-Reel Packaging for Surface Mount Semiconductors.”
5-295965-8698E
元器件交易网www.cecb2b.com
ATF-10736 Absolute Maximum Ratings
AbsoluteSymbolParameterUnitsMaximum[1]
VDSDrain-Source VoltageV+5VGSGate-Source VoltageV-4VGDGate-Drain VoltageV-7IDSDrain Current
mAIDSSPTTotal Power Dissipation[2,3]mW430TCHChannel Temperature°C175TSTG
Storage Temperature[4]
°C
-65 to +175
Thermal Resistance:
θjc = 350°C/W; TCH = 150°CLiquid Crystal Measurement:1µm Spot Size[5]
Part Number Ordering Information
Part NumberDevices Per Reel
Reel SizeATF-10736-TR110007\"ATF-10736-STR
10
STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”ATF-10736 Noise Parameters: VDS = 2 V, IDS = 25 mA
Freq.NFΓopt
GHzdBOMagAngRN/501.00.80.88410.522.00.90.75850.274.01.20.481590.086.01.40.46-1220.088.0
1.7
0.53
-71
0.43
ATF-10736 Typical Performance, TA = 25°C
18301525)GAB2.012d( A20MSGG)Bd1.59( N15I)BAd( O1.06G|S21|210MAGFNFON0.5502.04.06.08.010.012.000.51.02.04.06.08.012.0FREQUENCY (GHz)FREQUENCY (GHz)Figure 1. Optimum Noise Figure and Figure 2. Insertion Power Gain, Associated Gain vs. Frequency.Maximum Available Gain and V = 25 mA, T DS = 2V, IDSA = 25°C.Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA.5-30
Notes:
1.Permanent damage may occur ifany of these limits are exceeded.2.TCASE TEMPERATURE = 25°C.3.Derate at 2.9 mW/°C forTCASE > 25°C.
4.Storage above +150°C may tarnishthe leads of this package difficult tosolder into a circuit. After a devicehas been soldered into a circuit, itmay be safely stored up to 175°C.5.The small spot size of this tech-nique results in a higher, thoughmore accurate determination of θjcthan do alternate methods. SeeMEASUREMENTS section formore information.
302520MSG)Bd( N15IA|S21|2MAGG10MSG500.51.02.04.06.08.012.0FREQUENCY (GHz)Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 4 V, IDS = 70 mA.元器件交易网www.cecb2b.com
Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA=25°C, VDS=2V,IDS␣=␣25 mA
Freq.GHz0.51.02.03.04.05.06.07.08.09.010.011.012.0
S11
Mag..96.92.77.59.49.43.49.57.68.73.77.82.85
Ang.-20-40-76-107-136-1791381068162473622
dB15.415.213.812.511.210.08.67.35.64.23.01.0-0.2
S21Mag.5.905.774.924.203.643.152.742.321.921.621.411.120.98
Ang.1621441098357328-13-32-50-66-81-97
dB-32.4-26.7-21.3-20.0-17.3-15.5-14.9-14.8-14.7-14.8-14.8-14.6-14.5
S12Mag..024.046.086.111.137.167.179.183.185.183.182.186.189
S22
Ang.Mag.77.5066.4852.3940.3324.269.14-5.05-18.19-33.33-40.42-52.46-67.50-75.51
Ang.
-10-21-34-45-61-6522605746382715
Typical Scattering Parameters, Common Emitter, ZO = 50 Ω, TA=25°C, VDS=4V,IDS␣=␣70 mA
Freq.GHz0.51.02.03.04.05.06.07.08.09.010.011.012.0
S11
Mag..90.79.57.43.36.35.47.65.77.83.86.87.91
Ang.-32-53-96-129-16315611078584430161
dB19.018.015.513.311.610.18.87.05.13.52.41.10.1
S21Mag.8.957.965.994.603.783.212.762.231.801.501.321.130.99
Ang.14712890643916-11-36-56-72-88-106-123
dB-34.9-28.6-22.5-19.5-17.3-15.6-14.5-14.2-14.1-14.2-14.5-14.8-15.3
S12Mag..018.037.075.106.136.166.189.196.198.195.188.182.171
S22
Ang.777056433114-5 -23-38-48-64-77-91
Mag..40.38.34.31.28.22.15.28.42.51.55.60.65
Ang.-7-17-38-50-51-45-435373326187
A model for this device is available in the DEVICE MODELS section.
5-31
元器件交易网www.cecb2b.com
36 micro-X Package Dimensions
2.15(0.085)SOURCE42.11 (0.083) DIA.7DRAIN01GATE130.508SOURCE2(0.020) 1.45 ± 0.25(0.057 ± 0.010)2.54(0.100)0.15 ± 0.05(0.006 ± 0.002)0.56(0.022) 4.57 ± 0.250.180 ± 0.010Notes:1. Dimensions are in millimeters (inches)2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-32
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