Method of forming dual damascene structure

专利名称：Method of forming dual damascene

structure

发明人：I-Hsiung Huang,Jiunn-Ren Hwang,Kuei-Chun

Hung,Yeong-Song Yen

申请号：US09990163申请日：20011120

公开号：US200300996A1公开日：20030522

专利附图：

摘要：A method of forming a dual damascene structure. A substrate has a conductiveline thereon. A first dielectric layer, a second dielectric layer, a base anti-reflection

coating and a spin-on dielectric layer are sequentially formed over the substrate. Thespin-on dielectric layer, the base anti-reflection coating and the second dielectric layerare patterned to form an opening in the second dielectric layer and a first trench in thespin-on dielectric layer and the base anti-reflection coating. Using the spin-on dielectriclayer and the base anti-reflection coating as a mask, the exposed first dielectric layerwithin the opening is removed to form a via opening that exposes a portion of thesubstrate. The exposed second dielectric layer within the first trench is also removed toform a second trench that exposes a portion of the first dielectric layer. Thereafter, thespin-on dielectric layer and the base anti-reflection coating are removed. A conformalbarrier layer is formed over the second trench and the via opening. Finally, a conductivelayer is formed over the barrier layer completely filling the second trench and the viaopening.

申请人：HUANG I-HSIUNG,HWANG JIUNN-REN,HUNG KUEI-CHUN,YEN YEONG-SONG

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