Process for producing dielectric insulating thin f

专利名称：Process for producing dielectric insulating

thin film, and dielectric insulating material

发明人：Toyoki Kunitake,Yoshitaka Aoki申请号：US10550016申请日：20040326公开号：US07407895B2公开日：20080805

专利附图：

摘要：Provided is a method for producing, in a simple manner, a general-purposedielectric insulating thin film that has a varying dielectric constant and accepts an accuratefilm thickness control and a control of the composition, the structure and the thickness

thereof. The process includes a step (A) of making a substrate having a hydroxyl group inits surface or having a hydroxyl group introduced into its surface, adsorb a metalcompound having a functional group capable of reacting with a hydroxyl group forcondensation and capable of forming a hydroxyl group through hydrolysis, a step (B) ofremoving the excessive metal compound from the substrate surface, a step (C) ofhydrolyzing the metal compound to form a metal oxide layer, and a step (D) of treatingthe metal oxide layer according to any one treating method selected from the groupconsisting of oxygen plasma treatment, ozone oxidation treatment, firing treatment andrapid thermal annealing treatment to thereby obtain a dielectric insulating thin film.

申请人：Toyoki Kunitake,Yoshitaka Aoki

地址：Wako JP,Wako JP

国籍：JP,JP

代理机构：Birch, Stewart, Kolasch & Birch, LLP

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