Method of manufacturing a lateral power mosfet

专利名称：Method of manufacturing a lateral power

mosfet

发明人：Huang, Tsung-Yi,Chiang, Puo-Yu,Liu, Ruey-Hsien,Hsu, Shun-Liang

申请号：EP07011477.2申请日：20070612公开号：EP1914797A3公开日：20090812

专利附图：

摘要：A method of forming a semiconductor device with high breakdown voltage andlow on-resistance is provided. An embodiment comprises providing a substrate having a

buried layer in a portion of the top region of the substrate in order to extend the driftregion. A layer is formed over the buried layer and the substrate, and high-voltage N-well and P-well regions are formed adjacent to each other. Field dielectrics are locatedover portions of the high-voltage N-wells and P-wells, and a gate dielectric and a gateconductor are formed over the channel region between the high-voltage P-well and thehigh-voltage N-well. Source and drain regions for the transistor are located in the high-voltage P-well and high-voltage N-well. Optionally, a P field ring is formed in the N-wellregion under the field dielectric. In another embodiment, a method of manufacturing alateral power superjunction MOSFET with partition regions located in the high-voltage N-well and with an extended drift region is disclosed.

申请人：Taiwan Semiconductor Manufacturing Co., Ltd.

地址：No.8 Li-Hsin Rd 6 Science-Based Industrial Park Hsin-Chu, 300-77 TW

国籍：TW

代理机构：TER MEER - STEINMEISTER & PARTNER GbR

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