Method of forming semiconductor device with a cont

专利名称：Method of forming semiconductor device

with a contact plug formed by chemicalmechanical polishing

发明人：Kyoko Miyata申请号：US13276781申请日：20111019公开号：US012092B2公开日：20141216

专利附图：

摘要：A method of forming a semiconductor device may include, but is not limited to,the following processes. A multi-layered structure is prepared over a semiconductor

substrate. The multi-layered structure may include, but is not limited to, first and secondpatterns of a first insulating film, a second insulating film covering the first pattern of thefirst insulating film, and a first conductive film covering the second pattern of the firstinsulating film. The second insulating film and the first conductive film are polished underconditions that the first and second insulating films are greater in polishing rate than thefirst conductive film, to expose the first and second patterns of the first insulating film.

申请人：Kyoko Miyata

地址：Tokyo JP

国籍：JP

代理机构：Young & Thompson

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