Storage devices and electronic devices

专利名称：Storage devices and electronic devices发明人：山崎 舜平,木村 肇,上妻 宗広,青木 健,井上 広樹,原

田 伸太郎,松林 大介

申请号：JP2019557699申请日：20181122

公开号：JPWO2019111088A1公开日：20201217

专利附图：

摘要：Provided is a storage device that achieves both a holding operation at a hightemperature and a high-speed operation at a low temperature. The storage device has adriver circuit and a plurality of memory cells, the memory cell has a transistor and acapacitive element, and the transistor has a metal oxide in a channel forming region.When the transistor has a first gate and a second gate, the driver circuit has a function ofdriving the second gate, and during the period when the memory cell holds the data, thedriver circuit is stored in the second gate. Outputs the potential according to the

temperature or the temperature of the environment in which the storage device isinstalled.

申请人：株式会社半導体エネルギー研究所

地址：神奈川県厚木市長谷３９８番地

国籍：JP

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