Multiple port resistive memory cell

专利名称：Multiple port resistive memory cell发明人：Jhon Jhy Liaw申请号：US11427253申请日：20060628

公开号：US20080002453A1公开日：20080103

专利附图：

摘要：A resistive type memory system provides improved read access with multipleports. The resistive type memory system includes a plurality of resistive type memorycells arranged in an array. Each of the resistive type memory cells has a correspondingfirst port and a corresponding second port. Each first port enables both read access and

write access to the corresponding resistive type memory cell. Additionally, each secondport enables read access to the corresponding MRAM cell. Furthermore, the memorysystem enables overlapping read or write access, with another read access.

申请人：Jhon Jhy Liaw

地址：Hsin-Chu TW

国籍：TW

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