专利名称：SEMICONDUCTOR DEVICE INCLUDING
VERTICAL SEMICONDUCTOR ELEMENT
发明人：Yuma Kagata,Nozomu Akagi申请号：US14239291申请日：20120830
公开号：US20140203356A1公开日：20140724
专利附图：
摘要：A semiconductor device including a vertical semiconductor element has a trenchgate structure and a dummy gate structure. The trench gate structure includes a firsttrench that penetrates a first impurity region and a base region to reach a first
conductivity-type region in a super junction structure. The dummy gate structure includesa second trench that penetrates the base region reach the super junction structure and isformed to be deeper than the first trench.
申请人：Yuma Kagata,Nozomu Akagi
地址：Kariya-city JP,Nukata-gun JP
国籍：JP,JP
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