JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
(NPN) KTC3875 TRANSISTOR
=FEATURES = · High hFE
=· Low noise
· Complementary to KTA1504
MAXIMUM RATINGS (Ta=25 unless otherwise noted) ℃
Symbol Parameter VCBO VCEO VEBO IC PC Tj Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value Unit 60 V 50 V 5 150 150 150 -55-150 V mA mW ℃ ℃ SOT-23 Plastic-Encapsulate Transistors
SOT-23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
SymbolV(BR)CBO
Test conditions
IC=100μA,IE=0
Min
Typ
Max Unit60 V Collector-emitter breakdown voltage V(BR)CEOEmitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain
Collector-emitter saturation voltage base-emitter saturation voltage Transition frequency
Collector output capacitance Noise figure
V(BR)EBOICBO IEBO hFE VCE(sat) VBE(sat)
IC= 1mA, IB0 50 V IE= 100μA, IC=0
5 V VCB= 60V, IE0 0.1 μA
VEB= 5V, IC0 0.1 μA VCE= 6V, IC= 2mA IC=100mA, IB= 10mA IC=100mA, IB= 10mA VCE=10V, IC= 1mA
70
0.1
700 0.25 1
V V
fT Cob NF
80 MHz
VCB=10V,IE=0,f=1MHZ 2.0 3.5 pF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ 1.0 10 dB CLASSIFICATION OF hFE Rank Range Marking
70-140 120-240 200-400 350-700 ALO ALY ALG ALL A,May,2011
O Y GR BL 【南京南山半导体有限公司 — 长电三极管选型资料】www.nscn.com.cn
SymbolAA1A2bcDEE1ee1LL1θDimensions In MillimetersMin.Max.0.9001.1500.0000.1000.9001.0500.3000.5000.0800.1502.8003.0001.2001.4002.2502.5500.950 TYP.1.8002.0000.550 REF.0.3000.5000°8°Dimensions In InchesMin.Max.0.0350.0450.0000.0040.0350.0410.0120.0200.0030.0060.1100.1180.0470.0550.0890.1000.037 TYP.0.0710.0790.022 REF.0.0120.0200°8°
The bottom gasket
Label on the Reel 3000×15 PCS
3000×1 PCS
The top gasket
Stamp “EMPTY” on the empty box
Seal the box with the tape Seal the box with the tape QA Label
Label on the Inner Box
Inner Box: 210 mm× 208 mm×203 mm
Label on the Outer Box
Outer Box: 440 mm× 440 mm× 230 mm
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