Method of electroless introduction of interconnect

专利名称：Method of electroless introduction of

interconnect structures

发明人：Valery M. Dubin,Christopher D. Thomas,Paul

McGregor,Madhav Datta

申请号：US09753256申请日：20001228公开号：US06977224B2公开日：20051220

专利附图：

摘要：A method comprising introducing an interconnect structure in an openingthrough a dielectric over a contact point, and introducing a conductive shunt material

through a chemically-induced oxidation-reduction reaction. A method comprisingintroducing an interconnect structure in an opening through a dielectric over a contactpoint, introducing a conductive shunt material having an oxidation number over anexposed surface of the interconnect structure, and reducing the oxidation number of theshunt. An apparatus comprising a substrate comprising a device having contact point, adielectric layer overlying the device with an opening to the contact point, and an

interconnect structure disposed in the opening comprising an interconnect material and adifferent conductive shunt material.

申请人：Valery M. Dubin,Christopher D. Thomas,Paul McGregor,Madhav Datta

地址：Portland OR US,Aloha OR US,Hillsboro OR US,Portland OR US

国籍：US,US,US,US

代理机构：Blakely, Sokoloff, Taylor & Zafman LLP

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