Preliminary dataBSS 209PWOptiMOS-P Small-Signal-Transistor
Feature• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)• 150°C operating temperature• Avalanche rated• dv/dt rated
Product SummaryVDSRDS(on)ID3-20550-0.58
SOT-323
VmΩA
21VSO05561Drainpin 3TypeBSS 209PW
PackageSOT-323
Ordering CodeQ67042-S4074
MarkingX3s
Gatepin1Sourcepin 2Maximum Ratings,at Tj = 25 °C, unless otherwise specifiedParameter
Continuous drain current
TA=25°C TA=70°C
SymbolID
Value -0.58-0.46
UnitA
Pulsed drain current
TA=25°C
ID pulsEASdv/dtVGSPtotTj , Tstg-2.33.5-6±120.52-55... +15055/150/56
mJkV/µsVW°C
Avalanche energy, single pulse
ID=-0.58 A , VDD=-10V, RGS=25Ω
Reverse diode dv/dt
IS=-0.58A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C
Gate source voltagePower dissipation
TA=25°C
Operating and storage temperatureIEC climatic category; DIN IEC 68-1
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Preliminary dataThermal CharacteristicsParameterCharacteristics
Thermal resistance, junction - soldering pointSMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area 1)
BSS 209PWValuesmin.
typ.- --max.120 240160
K/WUnit
Symbol
RthJSRthJA
- --
Electrical Characteristics, at Tj = 25 °C, unless otherwise specifiedParameter
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=-250µA
Symbol
min.
V(BR)DSSVGS(th)IDSS
-20-0.6 --IGSSRDS(on)RDS(on)
---
Valuestyp.--0.9 -0.1-10-10563369
max.--1.2 -1-100-100900550
Unit
V
Gate threshold voltage, VGS = VDS
ID=-3.5µA
Zero gate voltage drain current
VDS=-20V, VGS=0, Tj=25°C VDS=-20V, VGS=0, Tj=150°C
µA
Gate-source leakage current
VGS=-12V, VDS=0
nAmΩ
Drain-source on-state resistance
VGS=-2.5V, ID=-0.46A
Drain-source on-state resistance
VGS=-4.5, ID=-0.58A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec.
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Preliminary dataElectrical Characteristics, at Tj = 25 °C, unless otherwise specifiedParameter
Dynamic CharacteristicsTransconductanceInput capacitanceOutput capacitance
Reverse transfer capacitanceTurn-on delay timeRise time
Turn-off delay timeFall time
gfsCissCossCrsstd(on)trtd(off)tf
VDD=-10V, VGS=-4.5V, ID=-0.58A, RG=6ΩçVDSç≥2*çIDç*RDS(on)maxID=-0.46A
VGS=0, VDS=-15V, f=1MHz
BSS 209PWValuesmin.0.87-------typ.1.7489.940.131.54.45.87.64.5
max.----6.68.711.46.7
nsSpFUnit
SymbolConditions
Gate Charge CharacteristicsGate to source chargeGate to drain chargeGate charge totalGate plateau voltageReverse Diode
Inverse diode continuous forward current
Inverse diode direct current,pulsed
Inverse diode forward voltageReverse recovery timeReverse recovery charge
VSDtrrQrrVGS=0, |IF| = |ID|VR=-10V, |IF| = |lD|, diF/dt=100A/µs
QgsQgdQg
VDD=-10V, ID=-0.58A
----
-0.12-0.74-0.92-1.7
-0.17nC-1.1-1.38-V
VDD=-10V, ID=-0.58A, VGS=0 to -4.5V
V(plateau)VDD=-10V, ID=-0.58AISISM
TA=25°C
-----
---1.391.27
-0.5-2.3
A
-0.88V11.21.59
nsnC
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Preliminary data1 Power dissipationPtot = f (TA)
0.85 BSS 209PWBSS 209PW2 Drain currentID = f (TA)
parameter: |VGS|≥ 4.5 V
-0.65 BSS 209PWW0.7 0.6 A-0.55 -0.5 -0.45 PtotID204060801001200.5 0.4 0.3 0.2 0.1 0 0-0.4 -0.35 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 °C1600 020406080100120°C160TATA3 Safe operating areaID = f ( VDS )
parameter : D = 0 , TA = 25 °C
-10 1 BSS 209PW4 Transient thermal impedanceZthJS = f (tp)parameter : D = tp/T
K/W10 3 BSS 209PW/ I A t p = 82.0µs 100 µs10 2 o n) = V DSDID R D-10 0 ZthJSS( 1 ms10 1 10 ms10 0 D = 0.500.20-10 -1 10 -1 single pulse10 DC -2 0.100.050.020.01-10 -2 -1 -10 -10 0 -10 1 V-10 2
10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s10 0
VDSPage 4
tp2001-12-05
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Preliminary data5 Typ. output characteristicID = f (VDS); Tj=25°Cparameter: tp = 80 µs
4 Vgs = -3VVgs = -3.5VAVgs = -4VBSS 209PW6 Typ. drain-source on resistanceRDS(on) = f (ID)parameter: VGS
1 Vgs = -2.2VVgs = -2.5VΩVgs = -2.8V RDS(on)0.8 0.7 Vgs = -2.5V2 0.6 Vgs = - 3VVgs= - 3.5VVgs = - 4VVgs = - 4.5VVgs= - 5VVgs= - 6VVgs = - 7V- IDVgs = -4.5VVgs = -7V1 Vgs = -2.2V0.5 Vgs = -2VVgs = -1.8V0.4 0.3 0 012345678V100.2 00.20.40.60.811.21.41.6A2- VDS - ID7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)maxparameter: tp = 80 µs
6 A8 Typ. forward transconductancegfs = f(ID); Tj=25°Cparameter: tp = 80 µs
4 S5 4.5 3 - ID4 3.5 3 2.5 1.5 2 1.5 1 0.5 0.5 0 00.511.522.5Vgfs2.5 2 1 3.50 01234A6- VGS- IDPage 5
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Preliminary data9 Drain-source on-resistanceRDS(on) = f(Tj)
parameter: ID = -0.58 A, VGS = -4.5 V
700 BSS 209PW10 Gate threshold voltageVGS(th) = f (Tj)
parameter: VGS = VDS, ID = -3.5 µA
1.4 mΩ
600 V RDS(on) VGS(th)1 98%550 500 450 400 98%0.8 typ.0.6 0.4 350 300 250 -60typ.2%0.2 -202060100 °C160 Tj0 -60-202060100 °C160 Tj11 Typ. capacitancesC = f (VDS)
parameter: VGS=0, f=1 MHz
10 3 12 Forward character. of reverse diodeIF = f (VSD)
parameter: Tj , tp = 80 µs
-10 1 BSS 209PWApF
-10 0 C10 2 CissCossIF-10 -1 Tj = 25 °C typCrssTj = 150 °C typTj = 25 °C (98%)Tj = 150 °C (98%)10 1 0510V20-10 -2 0-0.4-0.8-1.2-1.6-2-2.4V-3 - VDSVSDPage 6
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Preliminary data13 Typ. avalanche energy EAS = f (Tj), par.: ID = -0.58 A VDD = -10 V, RGS = 25 Ω
BSS 209PW14 Typ. gate charge|VGS| = f (QGate)
parameter: ID = -0.58 A pulsed
4 mJ
3 SSAGEV 2.5 -2 1.5 1 0.5 0 255075100 °C150 Tj15 Drain-source breakdown voltageV(BR)DSS = f (Tj)
-24.5 BSS 209PWV-23.5 SS-23 D)R-22.5 B(V-22 -21.5 -21 -20.5 -20 -19.5 -19 -18.5 -18 -60-202060100°C180TjPage 7
12 V10 9 8 7 0.2 Vds max6 0.5 Vds max0.8 Vds max5 4 3 2 1 0 00.511.52nC3|QGate|2001-12-05
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Preliminary dataBSS 209PWPublished by
Infineon Technologies AG,Bereichs KommunikationSt.-Martin-Strasse 53,D-81541 München
© Infineon Technologies AG 1999All Rights Reserved.
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Due to technical requirements components may contain dangerous substances.
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