Method of making a semiconductor device

专利名称：Method of making a semiconductor device发明人：Mikio Takagi,Hajime Kamioka,Kazufumi

Nakayama,Haruo Shimoda

申请号：US05/468876申请日：19740510公开号：US03940288A公开日：19760224

摘要：A method of making a semiconductor device capable of high- speed operationis disclosed in which when the current gain-bandwidth is increased by the formation of ashallow base region. A side etching process is used to decrease the base spreadingresistance and to allow ease in the formation of an emitter region of fine pattern. Whenthe emitter region is formed by using polycrystalline silicon as a source of impuritydiffusion, that area of an insulating film on a semiconductor substrate which adjoins thepolycrystalline silicon is removed before the impurity diffusion so as to prevent anabnormal diffusion phenomenon.< P>

BACKGROUND OF THE INVENTION

申请人：FUJITSU LIMITED

代理机构：Staas & Halsey

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