SIPMOS ® Small-Signal Transistor• N channel
• Enhancement mode• VGS(th) = 1.6 ...2.6 V
Pin 1G
TypeBSS 119TypeBSS 119
Pin 2SMarkingsSH
Pin 3D
VDS100 V
ID0.17 A
RDS(on)6 Ω
PackageSOT-23
Ordering CodeQ67000-S007Tape and Reel InformationE6327
Maximum RatingsParameter
Drain source voltageDrain-gate voltage
Symbol
Values 100 100
UnitV
VDSVDGRVGSVgsID
RGS = 20 kΩGate source voltage
Gate-source peak voltage,aperiodicContinuous drain current
± 14± 20
A
0.17
TA = 28 °C
DC drain current, pulsed
IDpuls
0.68
TA = 25 °CPower dissipation
Ptot
0.36
W
TA = 25 °C
Semiconductor Group
1Sep-13-1996
BSS 119
Maximum RatingsParameter
Chip or operating temperatureStorage temperature
Thermal resistance, chip to ambient airDIN humidity category, DIN 40 040IEC climatic category, DIN IEC 68-1
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
SymbolValues -55 ... + 150 -55 ... + 150≤ 350≤ 285E 55 / 150 / 56
Unit°CK/W
TjTstgRthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter
Symbol
min.
Static Characteristics
Drain- source breakdown voltage
Valuestyp.
max.
Unit
V(BR)DSS
100
- 2
- 2.6
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °CGate threshold voltage
VGS(th)
1.6
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
-- 0.1 2 10 4 6
1 60
µA
VDS = 100 V, VGS = 0 V, Tj = 25 °CVDS = 100 V, VGS = 0 V, Tj = 125 °CVDS = 60 V, VGS = 0 V, Tj = 25 °CGate-source leakage current
IGSS
- 100
nAΩ
-- 6 10
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.17 AVGS = 4.5 V, ID = 0.17 A
Semiconductor Group
2Sep-13-1996
BSS 119
Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter
Symbol
min.
Dynamic CharacteristicsTransconductance
Valuestyp.
max.
Unit
gfsCissCoss
-
SpF
VDS≥ 2 * ID * RDS(on)max, ID = 0.17 AInput capacitance
0.1 0.2- - 70 95 104
156
VGS = 0 V, VDS = 25 V, f = 1 MHzOutput capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHzReverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHzTurn-on delay time
td(on)
-4
6
ns
VDD = 30 V, VGS = 10 V, ID = 0.28 ARGS = 50 ΩRise time
tr
-5
8
VDD = 30 V, VGS = 10 V, ID = 0.28 ARGS = 50 ΩTurn-off delay time
td(off)
- 12
16
VDD = 30 V, VGS = 10 V, ID = 0.28 ARGS = 50 ΩFall time
tf
- 12
16
VDD = 30 V, VGS = 10 V, ID = 0.28 ARGS = 50 Ω
Semiconductor Group
3Sep-13-1996
BSS 119
Electrical Characteristics, at Tj = 25°C, unless otherwise specifiedParameter
Symbol
min.
Reverse Diode
Inverse diode continuous forward currentISTA = 25 °C
Inverse diode direct current,pulsed
A
---- 0.85
0.17 0.68
V
- 1.3
Valuestyp.
max.
Unit
ISMVSD
TA = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 0.34 A, Tj = 25 °C
Semiconductor Group
4Sep-13-1996
Power dissipation Ptot = ƒ(TA)
0.40 W P0.32 tot
0.28
0.24
0.20
0.16 0.12 0.08 0.04 0.00
0
20
40
60
80
100
120
°C
160
TASafe operating area ID=f(VDS)parameter : D = 0.01, TC=25°C
Semiconductor Group5BSS 119
Drain current ID = ƒ(TA)
parameter: VGS ≥ 10 V
0.18 A ID
0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00
0
20
40
60
80
100
120
°C
160
TA
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj)
120 V 116 V(BR)DSS
114 112 110 108 106 104 102 100 98 96 94 92 90 -60
-202060100°C160
Tj
Sep-13-1996
Typ. output characteristics ID = ƒ(VDS)
parameter: tp = 80 µs , Tj = 25 °C
0.38 Ptot = 0WlkiA jhgfe0.32 VGS [V] ID
a2.50.28 b3.0c3.5d0.24 d4.0e4.50.20 f5.0g5.5h6.00.16 i7.0j8.00.12 ck9.0l10.00.08 b0.04 a0.00 0.00.51.01.52.02.53.03.54.0
V
5.0
VDSTyp. transfer characteristics ID = f(VGS)
parameter: tp = 80 µs0.75 A 0.65
ID
0.60 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
0
1
2
3
4
5
6
7
8
V
10
VGSSemiconductor Group
6BSS 119
Typ. drain-source on-resistance RDS (on) = ƒ(ID)
parameter: tp = 80 µs, Tj = 25 °C
19 Ω abc16 RDS (on)
14 12 10 8 6 d4 fejhkig2 VGS [V] = abcdefghijk2.53.03.54.04.55.05.56.07.08.09.010.00 0.000.040.080.120.160.20A0.28
ID
Typ. forward transconductance gfs = f (ID)parameter: tp = 80 µs,
0.40 S gfs
0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.00
0.10
0.20
0.30
0.40
0.50
A
0.65
ID
Sep-13-1996
Drain-source on-resistance RDS (on) = ƒ(Tj)
parameter: ID = 0.17 A, VGS = 10 V
15 Ω 13 RDS (on)12 11 10 9 8 98%7 6 5 typ4 3 2 1 0 -60
-20
20
60
100
°C
160
TjTyp. capacitancesC = f (VDS)
parameter:VGS=0V, f = 1 MHz
10 3 pF C
10 2 Ciss10 1 CossCrss10 0 0
51015202530
V40
VDS
Semiconductor Group
7BSS 119
Gate threshold voltage VGS (th) = ƒ(Tj)
parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0 VGS(th)
3.6 3.2 2.8 98%2.4 typ2.0 2% 1.6 1.2 0.8 0.4 0.0 -60
-20
20
60
100
°C
160
Tj
Forward characteristics of reverse diode IF = ƒ(VSD)
parameter: Tj, tp = 80 µs
10 0 A IF
10 -1 10 -2 Tj = 25 °C typTj = 150 °C typTj = 25 °C (98%)Tj = 150 °C (98%)10 -3 0.0
0.40.81.21.62.02.4V3.0
VSD
Sep-13-1996
BSS 119
Package outlinesSOT-23Dimensions in mmSemiconductor Group
8Sep-13-1996
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