IRF7328TRPBF;IRF7328PBF;中文规格书,Datasheet资料

IRF7328PbF

HEXFET® Power MOSFET

Trench Technology

lÿÿUltra Low On-Resistancelÿ Dual P-Channel MOSFETlÿAvailable in Tape & ReellÿLead-Free

lÿÿ

VDSS-30V

RDS(on) max

21mΩ@VGS = -10V32mΩ@VGS = -4.5V

ID-8.0A-6.8A

Description

New trench HEXFET® Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistanceper silicon area. This benefit, combined with theruggedized device design that HEXFET powerMOSFETs are well known for, provides the designerwith an extremely efficient and reliable device for usein battery and load management applications.

S1G1S2G2123487D1D1D2D265Top ViewSO-8Absolute Maximum Ratings

Parameter

Max.

Units

VDSDrain-Source Voltage-30VID @ TA = 25°CContinuous Drain Current, VGS @ -10V-8.0ID @ TA = 70°CContinuous Drain Current, VGS @ -10V-6.4AIDMPulsed Drain Current󰀂-32PD @TA = 25°CMaximum Power Dissipation󰀁2.0WPD @TA = 70°CMaximum Power Dissipation󰀁1.3W Linear Derating Factor 16 mW/°C VGS Gate-to-Source Voltage ± 20 VTJ , TSTGJunction and Storage Temperature Range-55 to + 150°C

Thermal Resistance

Parameter

RθJA

Maximum Junction-to-Ambient 󰀁 Max. Units 62.5 °C/Wwww.irf.com1

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IRF7328PbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

V(BR)DSS

∆V(BR)DSS/∆TJ

Parameter

Drain-to-Source Breakdown VoltageBreakdown Voltage Temp. CoefficientStatic Drain-to-Source On-ResistanceGate Threshold VoltageForward TransconductanceDrain-to-Source Leakage CurrentGate-to-Source Forward LeakageGate-to-Source Reverse LeakageTotal Gate ChargeGate-to-Source Charge

Gate-to-Drain (\"Miller\") ChargeTurn-On Delay TimeRise Time

Turn-Off Delay TimeFall TimeInput CapacitanceOutput Capacitance

Reverse Transfer Capacitance

RDS(on)VGS(th)gfsIDSSIGSSQgQgsQgdtd(on)trtd(off)tfCissCossCrss

Min.-30––––––󰀂󰀂󰀂-1.012––––––––––––––––––––––––––––––––––––––––––Typ.–––-0.0181726.8––––––––––––––––––529.88.3131519826709262Max.UnitsConditions–––VVGS = 0V, ID = -250µA

–––V/°CReference to 25°C, ID = -1mA21VGS = -10V, ID = -8.0A 󰀃mΩ

32VGS = -4.5V, ID = -6.8A 󰀃-2.5VVDS = VGS, ID = -250µA–––SVDS = -10V, ID = -8.0A-15VDS = -24V, VGS = 0VµA

-25VDS = -24V, VGS = 0V, TJ = 70°C-100VGS = -20V

nA

100VGS = 20V78ID = -8.0A–––nCVDS = -15V–––VGS = -10V20VDD = -15V, VGS = -10.0V23ID = -1.0A

ns

297RG = 6.0Ω147RD = 15Ω 󰀃–––VGS = 0V–––pFVDS = -25V–––ƒ = 1.0MHz

Source-Drain Ratings and Characteristics

ISISMVSDtrrQrr ParameterContinuous Source Current(Body Diode)Pulsed Source Current(Body Diode) 󰀁Diode Forward VoltageReverse Recovery TimeReverse Recovery ChargeMin.Typ.Max.Units󰀂󰀂󰀂󰀂󰀂󰀂–––––––––󰀂󰀂󰀂󰀂󰀂󰀂–––3736-2.0A-32-1.256VnsnC ConditionsMOSFET symbolshowing theGintegral reversep-n junction diode.TJ = 25°C, IS = -2.0A, VGS = 0V 󰀃TJ = 25°C, IF = -2.0Adi/dt = -100A/µs 󰀃DSNotes:

max. junction temperature.

󰀂 Repetitive rating; pulse width limited by󰀃Pulse width ≤ 400µs; duty cycle ≤ 2%.

󰀁 Surface mounted on FR-4 board, t ≤ 10sec.

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IRF7328PbF

100VGS 100

VGS TOP -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0VBOTTOM -2.7V-ID, Drain-to-Source Current (A)-ID, Drain-to-Source Current (A)10TOP -10.0V -5.0V -4.5V -4.0V -3.5V -3.3V -3.0VBOTTOM -2.7V10

-2.7V1

1-2.7V20µs PULSE WIDTHTj = 25°C0.10.111010020µs PULSE WIDTHTj = 150°C0.1

0.1

1

10

100

-VDS, Drain-to-Source Voltage (V)

-VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output CharacteristicsFig 2. Typical Output Characteristics

R S ( o ) , Drain-to-Source On ResistanceDn(Normalized) 1002.0ID=-8.0A-I , Drain-to-Source Current (A)D1.5 10°T = 150 CJ1.0 1°T = 25 CJ0.50.12.0V = -15VDS20µs PULSE WIDTH3.04.05.06.00.0-60-40-20VGS=-10V020406080100120140160-V , Gate-to-Source Voltage (V)GS°T , Junction Temperature( C)JFig 3. Typical Transfer CharacteristicsFig 4. Normalized On-ResistanceVs. Temperature

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IRF7328PbF

4000VCGS=0V,f = 1MHzCiss=Cgs+ Cgd ,C SHORTEDdsCrss=CCgdoss=ds+ Cgd)F3000pC(iss ecnatica2000paC ,C1000CossCrss0 1 10 100-V , Drain-to-Source Voltage (V)DSFig 5. Typical Capacitance Vs.Drain-to-Source Voltage

100)A( tneT = 150 CrJ°ruC 10 niaT = 25 CrJ°D esreveR 1 , D IS-0.1V = 0 V GS0.20.40.60.81.01.21.41.6-V ,Source-to-Drain Voltage (V)SDFig 7. Typical Source-Drain Diode

Forward Voltage

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14ID=-8A)V(V e12VDS=-24VgDS=-15VatolV10 ecru8oS-ot-6etaG 4, S VG-200102030405060Q , Total Gate Charge (nC)GFig 6. Typical Gate Charge Vs.Gate-to-Source Voltage

1000OPERATION IN THIS AREA LIMITEDBY RDS(on))A( tn 100erruC niarD100us , 10 ID-1ms TC= 25 C° T° 1 Single PulseJ= 150 C10ms0.1 1 10 100-V , Drain-to-Source Voltage (V)DSFig 8. Maximum Safe Operating Areawww.irf.com

IRF7328PbF

10.0VDS8.0RDVGSRG-ID , Drain Current (A)D.U.T.+-VDD

6.0VGS4.0Pulse Width ≤ 1 µsDuty Factor ≤ 0.1 %Fig 10a. Switching Time Test Circuit

2.0td(on)trtd(off)tfVGS0.02550°T , Case Temperature( C)TAC7510012515010%Fig 9. Maximum Drain Current Vs.Case Temperature

90%VDSFig 10b. Switching Time Waveforms

1000Thermal Response(Z t h A )J 100D = 0.50 100.200.100.05 10.020.01SINGLE PULSE(THERMAL RESPONSE)0.10.0001PDMt1t2Notes:1. Duty factor D =t / t122. Peak TJ=PDMx ZthJA+ TA0.1 1 10 100 10000.0010.01t , Rectangular Pulse Duration (sec)1Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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IRF7328PbF

ΩRDS ( on ) , Drain-to-Source On Resistance ( ) (), Drain-to -Source On ResistanceΩRDS(on)0.0600.100

0.0500.075

0.0400.030ID = -8.0A0.050

VGS = -4.5V0.025

VGS = -10V0.0200.0100.0003.04.05.06.07.08.09.010.00.000

0

10

20

30

40

50

60

70

-ID , Drain Current ( A )

-VGS, Gate -to -Source Voltage (V)

Fig 12. Typical On-Resistance Vs.

Gate Voltage

Fig 13. Typical On-Resistance Vs.

Drain Current

CurrentRegulatorSameTypeasD.U.T.50KΩQG12V.2µF.3µF-D.U.T.VGS-3mA10 V+VDSQGSQGDVGIGIDCurrentSamplingResistorsChargeFig 14a. Basic Gate Charge WaveformFig 14b. Gate Charge Test Circuit

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IRF7328PbF

SO-8 Package Outline

Dimensions are shown in milimeters (inches)

INCHESMILLIMETERSDBDIMMINMAXMINMAXA5A.0532.06881.351.75A1.0040.00980.100.25b.013.0200.330.5168765.0075.00980.190.25EHcD.1.19684.805.0012340.25 [.010] AE.1497.15743.804.00e.050 BASIC1.27 BASICe1.025 BASIC0.635 BASICH.2284.24405.806.206XeK.0099.01960.250.50L.016.0500.401.27y 0° 8° 0° 8°e1AK x 45°Cθy0.10 [.004] 8X bA18X L8X c0.25 [.010] CAB7NOTES:FOOTPRINT1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.2. CONTROLLING DIMENSION: MILLIMETER8X 0.72 [.028]3. DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS.6.46 [.255] MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE.3X 1.27 [.050]8X 1.78 [.070]SO-8 Part Marking Information (Lead-Free)EXAMPLE: THIS IS AN IRF7101 (MOSFET)DATE CODE (YWW)P = DESIGPRODUCNATT (OPTIONAES LEAD-FREEL)Y =INTERNATIONALXXXXWW = LAST DIGIT OF THE YEAA = ASSEMBLY SIT WEEKRE CODERECTIFIERF7101LOGOLOT CODEPART NUMBERwww.irf.comhttp://oneic.com/7IRF7328PbF

SO-8 Tape and Reel

Dimensions are shown in milimeters (inches)

TERMINAL NUMBER 112.3 ( .484 )11.7 ( .461 )8.1 ( .318 )7.9 ( .312 )FEED DIRECTIONNOTES:1. CONTROLLING DIMENSION : MILLIMETER.2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).3. OUTLINE CONFORMS TO EIA-481 & EIA-1. 330.00(12.992) MAX.14.40 ( .566 )12.40 ( .488 )NOTES :1. CONTROLLING DIMENSION : MILLIMETER.2. OUTLINE CONFORMS TO EIA-481 & EIA-1.Data and specifications subject to change without notice.

This product has been designed and qualified for the Consumer market.

Qualifications Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.12/2010

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IRF7328TRPBF

IRF7328PBF