Semiconductor devices including vertical transisto

专利名称：Semiconductor devices including vertical

transistors, electronic systems including thesame and methods of manufacturing thesame

发明人：Ki Ho Yang申请号：US14533795申请日：20141105公开号：US09224741B2公开日：20151229

专利附图：

摘要：The semiconductor device includes word lines on a semiconductor substrate,

common gates connected to each of the word lines and vertically disposed in thesemiconductor substrate, buried bit lines intersecting the word lines at a non-right anglein a plan view, and a pair of vertical transistors sharing each of the common gates. Thepair of vertical transistors is disposed on both sides of one of the word lines. Further, thepair of vertical transistors is electrically connected to the two adjacent buried bit lines.Electronic systems including the semiconductor device and related methods are alsoprovided.

申请人：SK hynix Inc.

地址：Icheon-si Gyeonggi-do KR

国籍：KR

代理机构：William Park & Associates Ltd.

更多信息请下载全文后查看