专利名称：METHOD TO FABRICATE COPPER WIRING
STRUCTURES AND STRUCTURES FORMEDTEHREBY
发明人：Fenton Read McFeely,Chih-Chao Yang申请号：US13025322申请日：20110211
公开号：US20120205804A1公开日：20120816
专利附图：
摘要：Techniques formation of high purity copper (Cu)-filled lines and vias areprovided. In one aspect, a method of fabricating lines and vias filled with high purity
copper with is provided. The method includes the following steps. A via is etched in adielectric. The via is lined with a diffusion barrier. A thin ruthenium (Ru) layer is
conformally deposited onto the diffusion barrier. A Cu layer is deposited on the Ru layerby a sputtering process. A reflow anneal is performed to eliminate voids in the lines andvias.
申请人：Fenton Read McFeely,Chih-Chao Yang
地址：Ossining NY US,Glenmont NY US
国籍：US,US
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