专利名称：Dielectric barrier films for use as copper
barrier layers in semiconductor trench andvia structures
发明人：Hong-Qiang Lu,Peter A. Burke,Wilbur G.
Catabay
申请号：US10321938申请日：20021216公开号：US06939800B1公开日：20050906
专利附图：
摘要：The present invention is directed to improved dielectric copper barrier layer
and related interconnect structures. One structure includes a semiconductor substratehaving a copper line. An insulating layer formed of at least one of silicon and carbon isformed on the underlying copper line. An opening is formed in the insulating layer toexpose a portion of the copper line. The inner surface of the opening in the insulatinglayer has a dielectric barrier layer formed thereon to prevent the diffusion of copper intothe insulating layer. A copper plug is formed to fill the opening and make electricalcontact with the underlying copper interconnect structure. Aspects of the invention alsoinclude methods for forming the dielectric copper barrier layers and associate copperinterconnects to the underlying copper lines.
申请人：Hong-Qiang Lu,Peter A. Burke,Wilbur G. Catabay
地址：Gresham OR US,Portland OR US,Saratoga CA US
国籍：US,US,US
代理机构：Beyer Weaver & Thomas, LLP
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