FDS9435A

FDS9435A October 2001 FDS9435A 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Features • –5.3 A, –30 V RDS(ON) = 50 mΩ @ VGS = –10 V RDS(ON) = 80 mΩ @ VGS = –4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • Power management • Load switch • Battery protection DDSO-8DDDDDD5674321Pin 1SO-8GGSSSSSS8 oAbsolute Maximum Ratings T=25C unless otherwise noted ASymbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed (Note 1a) (Note 1b) (Note 1c) (Note 1a) Ratings –30 ±25 –5.3 –50 2.5 1.2 1 –55 to +175 Units V V A W Power Dissipation for Single Operation TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) (Note 1) 50 125 25 °C/W °C/W °C/W Package Marking and Ordering Information Device Marking FDS9435A ©2001 Fairchild Semiconductor Corporation

FDS9435A Rev D1(W)

Device FDS9435A Reel Size 13’’ Tape width 12mm Quantity 2500 units

FDS9435A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –30 –1 –23 –1.7 4.5 42 65 57 10 528 132 70 7 13 14 9 10 2.2 2 –0.8 –1 100 –100 –3 50 80 77 14 24 25 17 14 –2.1 –1.2 V mV/°C µA nA nA V mV/°C mΩ A S pF pF pF ns ns ns ns nC nC nC A V Off Characteristics Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 25 V, VGS = –25 V VDS = 0 V VDS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –5.3 A VGS = –4.5 V, ID = –4 A VGS= –10 V, ID = –5.3 A, TJ=125°C VGS = –10 V, VDS = –5 V, VDS = –15 V, f = 1.0 MHz VDS = –5 V ID = –5.3 A V GS = 0 V, ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: –25 Dynamic Characteristics Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω VDS = –15 V, VGS = –10 V ID = –4 A, Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9435A Rev D1(W)

FDS9435A Typical Characteristics 30 -5.0VV -4.5VV -4.0V10RDS(ON,) NORMALIZEDDRAIN-SOURCE ON-RESISTANCEVGS = -10V-ID, DRAIN CURRENT (A) -6.0V21.8VGS=-4.0V1.6 -4.5V1.41.210.801234560612182430-VDS, DRAIN TO SOURCE VOLTAGE (V)-ID, DRAIN CURRENT (A) -5.0V -6.0V -7.0V -8.0V -10V20 -3.5V-3.0V0 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25RDS(ON,) ON-RESISTANCE (OHM)1.6RDS(ON, NORMALIZED) DRAIN-SOURCE ON-RESISTANCEID = -5.3AVGS = -10VID = -2.8A0.21.41.20.15TA = 125oC0.1TA = 25oC0.0510.80.6-50-250255075100o0125150175246810TJ, JUNCTION TEMPERATURE (C)-VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15-IS, REVERSE DRAIN CURRENT (A)VDS = -5V12-ID, DRAIN CURRENT (A)TA = -55oC125oC925oCFigure 4. On-Resistance Variation with Gate-to-Source Voltage. 100101VGS =0VTA = 125oC25oC0.1-55oC0.010.0010.000100.20.40.60.811.21.463011.522.533.4.5-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9435A Rev D1(W)

FDS9435A Typical Characteristics 10-VGS, GATE-SOURCE VOLTAGE (V)ID = -5.3A8-15VCAPACITANCE (pF)660050040030020010000246810Qg, GATE CHARGE (nC)CRSS0051015202530COSSCISSVDS = -5V-10V800700f = 1 MHzVGS = 0 V42 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100100µs-ID, DRAIN CURRENT (A)10RDS(ON) LIMIT100ms1s1VGS = -10VSINGLE PULSERθJA = 125oC/WTA = 25oC0.010.1110100-VDS, DRAIN-SOURCE VOLTAGE (V)10sDC1ms10msP(pk), PEAK TRANSIENT POWER (W)50Figure 8. Capacitance Characteristics. 40SINGLE PULSERθJA = 125°C/WTA = 25°C30200.11000.0010.010.11t1, TIME (sec)101001000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE1D = 0.50.2RθJA(t) = r(t) + RθJARθJA = 125C/Wo0.10.10.050.02P(pk)t1t2TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t20.010.01SINGLE PULSE0.0010.00010.0010.010.1t1, TIME (sec)1101001000Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9435A Rev D1(W)

TRADEMARKSThe following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and isnot intended to be an exhaustive list of all such trademarks.ACEx™Bottomless™CoolFET™CROSSVOLT™DenseTrench™DOME™EcoSPARK™E2CMOSTMEnSignaTMFACT™FACT Quiet Series™DISCLAIMERFAST®FASTr™FRFET™GlobalOptoisolator™GTO™HiSeC™ISOPLANAR™LittleFET™MicroFET™MicroPak™MICROWIRE™OPTOLOGIC™OPTOPLANAR™PACMAN™POP™Power247™PowerTrench®QFET™QS™QT Optoelectronics™Quiet Series™SILENT SWITCHER®SMART START™STAR*POWER™Stealth™SuperSOT™-3SuperSOT™-6SuperSOT™-8SyncFET™TinyLogic™TruTranslation™UHC™UltraFET®VCX™STAR*POWER is used under licenseFAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHERNOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILDDOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCTOR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENTRIGHTS, NOR THE RIGHTS OF OTHERS.LIFE SUPPORT POLICYFAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORTDEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.As used herein:1. Life support devices or systems are devices or2. A critical component is any component of a lifesystems which, (a) are intended for surgical implant intosupport device or system whose failure to perform canthe body, or (b) support or sustain life, or (c) whosebe reasonably expected to cause the failure of the lifefailure to perform when properly used in accordancesupport device or system, or to affect its safety orwith instructions for use provided in the labeling, can beeffectiveness.reasonably expected to result in significant injury to theuser.PRODUCT STATUS DEFINITIONSDefinition of TermsDatasheet IdentificationAdvance InformationProduct StatusFormative orIn DesignDefinitionThis datasheet contains the design specifications forproduct development. Specifications may change inany manner without notice.This datasheet contains preliminary data, andsupplementary data will be published at a later date.Fairchild Semiconductor reserves the right to makechanges at any time without notice in order to improvedesign.This datasheet contains final specifications. FairchildSemiconductor reserves the right to make changes atany time without notice in order to improve design.PreliminaryFirst ProductionNo Identification NeededFull ProductionObsoleteNot In ProductionThis datasheet contains specifications on a productthat has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only.Rev. H4