FDS9435A Rev D1(W)
Device FDS9435A Reel Size 13’’ Tape width 12mm Quantity 2500 units
FDS9435A Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR VGS(th) ∆VGS(th) ∆TJ RDS(on) TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units –30 –1 –23 –1.7 4.5 42 65 57 10 528 132 70 7 13 14 9 10 2.2 2 –0.8 –1 100 –100 –3 50 80 77 14 24 25 17 14 –2.1 –1.2 V mV/°C µA nA nA V mV/°C mΩ A S pF pF pF ns ns ns ns nC nC nC A V Off Characteristics Drain–Source Breakdown Voltage VGS = 0 V, ID = –250 µA Breakdown Voltage Temperature ID = –250 µA, Referenced to 25°C Coefficient Zero Gate Voltage Drain Current VDS = –24 V, VGS = 0 V Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) VGS = 25 V, VGS = –25 V VDS = 0 V VDS = 0 V On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –5.3 A VGS = –4.5 V, ID = –4 A VGS= –10 V, ID = –5.3 A, TJ=125°C VGS = –10 V, VDS = –5 V, VDS = –15 V, f = 1.0 MHz VDS = –5 V ID = –5.3 A V GS = 0 V, ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD Notes: –25 Dynamic Characteristics Switching Characteristics Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω VDS = –15 V, VGS = –10 V ID = –4 A, Drain–Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage (Note 2) 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper c) 125°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDS9435A Rev D1(W)
FDS9435A Typical Characteristics 30 -5.0VV -4.5VV -4.0V10RDS(ON,) NORMALIZEDDRAIN-SOURCE ON-RESISTANCEVGS = -10V-ID, DRAIN CURRENT (A) -6.0V21.8VGS=-4.0V1.6 -4.5V1.41.210.801234560612182430-VDS, DRAIN TO SOURCE VOLTAGE (V)-ID, DRAIN CURRENT (A) -5.0V -6.0V -7.0V -8.0V -10V20 -3.5V-3.0V0 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.25RDS(ON,) ON-RESISTANCE (OHM)1.6RDS(ON, NORMALIZED) DRAIN-SOURCE ON-RESISTANCEID = -5.3AVGS = -10VID = -2.8A0.21.41.20.15TA = 125oC0.1TA = 25oC0.0510.80.6-50-250255075100o0125150175246810TJ, JUNCTION TEMPERATURE (C)-VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 15-IS, REVERSE DRAIN CURRENT (A)VDS = -5V12-ID, DRAIN CURRENT (A)TA = -55oC125oC925oCFigure 4. On-Resistance Variation with Gate-to-Source Voltage. 100101VGS =0VTA = 125oC25oC0.1-55oC0.010.0010.000100.20.40.60.811.21.463011.522.533.4.5-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS9435A Rev D1(W)
FDS9435A Typical Characteristics 10-VGS, GATE-SOURCE VOLTAGE (V)ID = -5.3A8-15VCAPACITANCE (pF)660050040030020010000246810Qg, GATE CHARGE (nC)CRSS0051015202530COSSCISSVDS = -5V-10V800700f = 1 MHzVGS = 0 V42 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100100µs-ID, DRAIN CURRENT (A)10RDS(ON) LIMIT100ms1s1VGS = -10VSINGLE PULSERθJA = 125oC/WTA = 25oC0.010.1110100-VDS, DRAIN-SOURCE VOLTAGE (V)10sDC1ms10msP(pk), PEAK TRANSIENT POWER (W)50Figure 8. Capacitance Characteristics. 40SINGLE PULSERθJA = 125°C/WTA = 25°C30200.11000.0010.010.11t1, TIME (sec)101001000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE1D = 0.50.2RθJA(t) = r(t) + RθJARθJA = 125C/Wo0.10.10.050.02P(pk)t1t2TJ - TA = P * RθJA(t)Duty Cycle, D = t1 / t20.010.01SINGLE PULSE0.0010.00010.0010.010.1t1, TIME (sec)1101001000Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS9435A Rev D1(W)
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