BUK466-100A资料

Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

GENERAL DESCRIPTION

N-channel enhancement mode

field-effect power transistor in a plasticenvelope suitable for surface mountapplications.

The device is intended for use inSwitched Mode Power Supplies(SMPS), motor control, welding,

DC/DC and AC/DC converters, and ingeneral purpose switchingapplications.

QUICK REFERENCE DATA

SYMBOLVDSIDPtotTj

RDS(ON)

PARAMETERDrain-source voltageDrain current (DC)

Total power dissipationJunction temperatureDrain-source on-stateresistance

MAX.100341501750.057

UNITVAW˚CΩ

PINNING - SOT404

PIN123mbgatedrainsourcedrainDESCRIPTIONPIN CONFIGURATION

mbSYMBOL

dg213sLIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134)SYMBOLVDSVDGR±VGSIDIDIDMPtotTstgTj

PARAMETER

Drain-source voltageDrain-gate voltageGate-source voltageDrain current (DC)Drain current (DC)

Drain current (pulse peak value)Total power dissipationStorage temperatureJunction temperature

CONDITIONS-RGS = 20 kΩ-Tmb = 25 ˚CTmb = 100 ˚CTmb = 25 ˚CTmb = 25 ˚C--MIN.-------- 55-MAX.100100303424136150175175

UNITVVVAAAW˚C˚C

THERMAL RESISTANCES

SYMBOLPARAMETERRth j-mbRth j-a

Thermal resistance junction tomounting base

Thermal resistance junction toambient

CONDITIONS

minimum footprint,

FR4 board (see Fig. 18).

MIN.--TYP.-50

MAX.1.0-UNITK/WK/W

February 19961Rev 1.000

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Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

STATIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specifiedSYMBOLV(BR)DSSVGS(TO)IDSSIDSSIGSS

RDS(ON)

PARAMETER

Drain-source breakdownvoltage

Gate threshold voltage

Zero gate voltage drain currentZero gate voltage drain currentGate source leakage currentDrain-source on-stateresistance

CONDITIONS

VGS = 0 V; ID = 0.25 mA

VDS = VGS; ID = 1 mA

VDS = 100 V; VGS = 0 V; Tj = 25 ˚CVDS = 100 V; VGS = 0 V; Tj =125 ˚CVGS = ±30 V; VDS = 0 VVGS = 10 V; ID = 15 A

MIN.1002.1----TYP.-3.010.1100.052

MAX.-4.0101.01000.057

UNITVVµAmAnAΩ

DYNAMIC CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specifiedSYMBOLgfsCissCossCrsstd ontrtd offtfLdLdLs

PARAMETER

Forward transconductanceInput capacitanceOutput capacitanceFeedback capacitanceTurn-on delay timeTurn-on rise timeTurn-off delay timeTurn-off fall timeInternal drain inductanceInternal drain inductanceInternal source inductance

CONDITIONSVDS = 25 V; ID = 15 A

VGS = 0 V; VDS = 25 V; f = 1 MHzVDD = 30 V; ID = 3 A;VGS = 10 V;Rgen = 50 Ω;RGS = 50 Ω

Measured from contact screw ontab to centre of die

Measured from drain lead 6 mmfrom package to centre of dieMeasured from source lead 6 mmfrom package to source bond pad

MIN.12----------TYP.1615004501302040150653.54.57.5

MAX.-2000600200306020085---UNITSpFpFpFnsnsnsnsnHnHnH

REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS

Tmb = 25 ˚C unless otherwise specifiedSYMBOLIDRIDRMVSDtrrQrr

PARAMETER

Continuous reverse draincurrent

Pulsed reverse drain currentDiode forward voltageReverse recovery timeReverse recovery charge

CONDITIONS--IF = 34 A ; VGS = 0 VIF = 34 A; -dIF/dt = 100 A/µs;VGS = 0 V; VR = 30 V

MIN.-----TYP.--1.81001.0

MAX.341362.5--UNITAAVnsµC

February 19962Rev 1.000

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Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

120 110 100 90 80 70 60 50 40 30 20 10 0 PD%Normalised Power Derating10 Zth j-mb / (K/W)BUKx56-lv1 D =0.50.1 0.20.10.050.02PD0tptpTt1E+010.01 D = T020406080100Tmb / C1201401601800.001 1E-051E-03t / s1E-01Fig.1. Normalised power dissipation.PD% = 100⋅PD/PD 25 ˚C = f(Tmb)ID%Normalised Current DeratingFig.4. Transient thermal impedance.Zth j-mb = f(t); parameter D = tp/TID / AVGS / V = 152010BUK456-100A87120 110 100 90 80 70 60 50 40 30 20 10 0 70 60 50 40 30 20 10 654024VDS / V6810020406080100Tmb / C1201401601800 Fig.2. Normalised continuous drain current.ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 VID / ABUK456-100A,BFig.5. Typical output characteristics, Tj = 25 ˚C.ID = f(VDS); parameter VGSRDS(ON) / Ohm4.555.566.57BUK456-100AVGS / V = 7.58100.1 201000 0.2 100 S(RDON ) =VDS/IDAtp = 10 us100 us10 DC1 ms10 ms100 ms1 110VDS / V10010000 02040ID / A6080Fig.3. Safe operating area. Tmb = 25 ˚CID & IDM = f(VDS); IDM single pulse; parameter tpFig.6. Typical on-state resistance, Tj = 25 ˚C.RDS(ON) = f(ID); parameter VGSFebruary 19963Rev 1.000

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Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

70 60 50 40 30 20 10 0 ID / ATj / C = 25BUK456-100A4 VGS(TO) / Vmax.1503 typ.min.2 1 0 024VGS / V6810-60-202060Tj / C100140180Fig.7. Typical transfer characteristics.ID = f(VGS) ; conditions: VDS = 25 V; parameter Tjgfs / S20 BUK456-100AFig.10. Gate threshold voltage.VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGSID / ASUB-THRESHOLD CONDUCTION1E-01 1E-02 2 %typ98 %1E-03 10 1E-04 1E-05 0 02040ID / A601E-06 012VGS / V34Fig.8. Typical transconductance, Tj = 25 ˚C.gfs = f(ID); conditions: VDS = 25 VaNormalised RDS(ON) = f(Tj)Fig.11. Sub-threshold drain current.ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGSC / pFBUK4y6-1002.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 100001000CissCoss100Crss0 -60-202060Tj / C10014018010020VDS / V40Fig.9. Normalised drain-source on-state resistance.a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 15 A; VGS = 10 VFig.12. Typical capacitances, Ciss, Coss, Crss.C = f(VDS); conditions: VGS = 0 V; f = 1 MHzFebruary 19964Rev 1.000

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Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

12 10 8 6 VGS / VBUK456-100VDS / V =20 70 60 50 IF / ABUK456-100A80 40 Tj / C = 15030 254 2 0 20 10 020QG / nC400 01VSDS / V2Fig.13. Typical turn-on gate-charge characteristics.VGS = f(QG); conditions: ID = 34 A; parameter VDSFig.14. Typical reverse diode current.IF = f(VSDS); conditions: VGS = 0 V; parameter TjFebruary 19965Rev 1.000

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Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

MECHANICAL DATA

Dimensions in mmNet Mass: 1.4 g10.3 max4.5 max1.4 max11 max15.42.50.85 max(x2)2.54 (x2)0.5Fig.15. SOT404 : centre pin connected to mounting base.MOUNTING INSTRUCTIONS

Dimensions in mm11.59.017.52.03.85.08Fig.16. SOT404 : soldering pattern for surface mounting.Notes

1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent

damage to MOS gate oxide.2. Epoxy meets UL94 V0 at 1/8\".

February 19966Rev 1.000

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Philips Semiconductors

Product specification

PowerMOS transistorBUK466-100A

DEFINITIONS

Data sheet statusObjective specificationProduct specificationLimiting values

Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above oneor more of the limiting values may cause permanent damage to the device. These are stress ratings only andoperation of the device at these or at any other conditions above those given in the Characteristics sections ofthis specification is not implied. Exposure to limiting values for extended periods may affect device reliability.Application information

Where application information is given, it is advisory and does not form part of the specification.© Philips Electronics N.V. 1996

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of thecopyright owner.

The information presented in this document does not form part of any quotation or contract, it is believed to beaccurate and reliable and may be changed without notice. No liability will be accepted by the publisher for anyconsequence of its use. Publication thereof does not convey nor imply any license under patent or otherindustrial or intellectual property rights.

This data sheet contains target or goal specifications for product development.This data sheet contains final product specifications.

Preliminary specificationThis data sheet contains preliminary data; supplementary data may be published later.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resultingfrom such improper use or sale.

February 19967Rev 1.000