IRCZ44资料

PD - 9.529B

IRCZ44

HEXFET® Power MOSFET

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Dynamic dv/dt RatingCurrent Sense

175°C Operating TemperatureFast SwitchingEase of Paralleling

Simple Drive Requirements

VDSS = 60VRDS(on) = 0.028Ω

ID = 50*A

Description

Third Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance andcost-effectiveness.

The HEXSense device provides an accurate fraction of the drain current throughthe additional two leads to be used for control or protection of the device. Thesedevices exhibit similar electrical and thermal characteristics as their IRF-seriesequivalent part numbers. The provision of a kelvin source connection effectivelyeliminates problems of common source inductance when the HEXSence isused as a fast, high-current switch in non current-sensing applications.

TO-220 HexSense

Absolute Maximum Ratings

Parameter

ID @ TC = 25°CID @ TC = 100°CIDM

PD @TC = 25°CVGSEASdv/dtTJTSTG

Continuous Drain Current, VGS @ 10VContinuous Drain Current, VGS @ 10VPulsed Drain Current 󰂁Power DissipationLinear Derating FactorGate-to-Source Voltage

Single Pulse Avalanche Energy 󰂂Peak Diode Recovery dv/dt 󰂃Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 secondsMounting Torque, 6-32 or M3 screw

Max.

50*372101501.0±20304.5

-55 to + 175300 (1.6mm from case)10 lbf•in (1.1 N•m)

Units

AWW/°CVmJV/ns°C

Thermal Resistance

Parameter

RθJCRθCSRθJA

Junction-to-Case

Case-to-Sink, Flat, Greased SurfaceJunction-to-Ambient—

Min.

—

——

Typ.

—0.50—

Max.

1.0—62

Units

°C/W

C-13

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C-14

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C-15

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C-16

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C-17

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C-18