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MITSUBISHI IGBT MODULES
CM100TL-24NF
HIGH POWER SWITCHING USE
ABSOLUTE MAXIMUM RATINGS (Tj = 25°C)
SymbolVCESVGESICICM
IE (Note 1)IEM (Note 1)PC (Note 3)TjTstgViso
———
Parameter
Collector-emitter voltageGate-emitter voltageCollector currentEmitter current
Maximum collector dissipationJunction temperatureStorage temperatureIsolation voltageTorque strengthWeightG-E ShortC-E Short
DC, TC = 80°C*1PulsePulse
TC = 25°C
Conditions
Ratings1200±20100200100200620–40 ~ +150–40 ~ +12525002.5 ~ 3.52.5 ~ 3.5350
UnitVVAAAAW°C°CVN • mN • mg
(Note 2)(Note 2)
Main Terminal to base plate, AC 1 min.Main Terminal M5Mounting holes M5Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)SymbolICESVGE(th)IGESVCE(sat)CiesCoesCresQGtd(on)tr
td(off)tf
trr (Note 1)Qrr (Note 1)VEC(Note 1)Rth(j-c)QRth(j-c)RRth(c-f)RG
Parameter
Collector cutoff currentGate-emitter threshold voltageGate leakage currentCollector-emitter saturation voltageInput capacitanceOutput capacitance
Reverse transfer capacitanceTotal gate chargeTurn-on delay timeTurn-on rise timeTurn-off delay timeTurn-off fall time
Reverse recovery timeReverse recovery chargeEmitter-collector voltageThermal resistanceContact thermal resistanceExternal gate resistance
Test conditions
VCE = VCES, VGE = 0VIC = 10mA, VCE = 10VVGE = VGES, VCE = 0VIC = 100A, VGE = 15VVCE = 10VVGE = 0V
VCC = 600V, IC = 100A, VGE = 15V
VCC = 600V, IC = 100AVGE1 = VGE2 = 15V
RG = 3.1Ω, Inductive load switching operationIE = 100A
IE = 100A, VGE = 0VIGBT part (1/6 module)*1FWDi part (1/6 module)*1
Case to fin, Thermal compound Applied (1/6 module)*2
Tj = 25°CTj = 125°C
Min.—6—————————————————3.1
LimitsTyp.—7—2.12.4———500—————4.8———0.085—
Max.180.53.0—17.51.50.34—10070300350150—3.80.200.28—42
UnitmAVµAVnFnFnFnCnsnsnsnsnsµCV°C/W°C/W°C/WΩ
*1 : Tc measured point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
*2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
Note1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.3. Junction temperature (Tj) should not increase beyond 150°C.
4. Pulse width and repetition rate should be such as to cause neglible temperature rise.
Jun. 2004
元器件交易网www.cecb2b.com
MITSUBISHI IGBT MODULES
CM100TL-24NF
HIGH POWER SWITCHING USE
PERFORMANCE CURVESOUTPUT CHARACTERISTICS(TYPICAL)COLLECTOR-EMITTERSATURATION VOLTAGE VCE (sat) (V)COLLECTOR-EMITTER SATURATIONVOLTAGE CHARACTERISTICS(TYPICAL)4VGE = 15V200COLLECTOR CURRENT IC (A)VGE =20V1513Tj = 25°C121503100115021091Tj = 25°CTj = 125°C005010015020000246810COLLECTOR-EMITTER VOLTAGE VCE (V)COLLECTOR CURRENT IC (A)COLLECTOR-EMITTER SATURATIONVOLTAGE CHARACTERISTICS(TYPICAL)COLLECTOR-EMITTERSATURATION VOLTAGE VCE (sat) (V)FREE-WHEEL DIODEFORWARD CHARACTERISTICS(TYPICAL)103EMITTER CURRENT IE (A)75321086420Tj = 25°C1027532IC = 200AIC = 100AIC = 40A68101214161820Tj = 25°CTj = 125°C012345101GATE-EMITTER VOLTAGE VGE (V)EMITTER-COLLECTOR VOLTAGE VEC (V)CAPACITANCE–VCECHARACTERISTICS(TYPICAL)102CAPACITANCE Cies, Coes, Cres (nF)7532753275327532HALF-BRIDGESWITCHING CHARACTERISTICS(TYPICAL)103Cies753275327532td(off)tf101SWITCHING TIME (ns)102td(on)trConditions:VCC = 600VVGE = ±15VRG = 3.1ΩTj = 125°CInductive load23571022357103100CoesCres10110–1VGE = 0V10–2–110235710023571012357102COLLECTOR-EMITTER VOLTAGE VCE (V)100110COLLECTOR CURRENT IC (A)Jun. 2004
元器件交易网www.cecb2b.com
MITSUBISHI IGBT MODULES
CM100TL-24NF
HIGH POWER SWITCHING USE
REVERSE RECOVERY TIME trr (ns)REVERSE RECOVERY CURRENT lrr (A)7532NORMALIZED TRANSIENTTHERMAL IMPEDANCE Zth (j–c) (ratio)REVERSE RECOVERY CHARACTERISTICSOF FREE-WHEEL DIODE(TYPICAL)103TRANSIENT THERMALIMPEDANCE CHARACTERISTICS(IGBT part & FWDi part)10–3235710–2235710–123571002357101100Single Pulse,75TC = 25°C3Under the chip210–1753210–1753275321027532IrrtrrConditions:VCC = 600VVGE = ±15VRG = 3.1ΩTj = 25°CInductive load23571022357103101110IGBT part:10–2Per unit base =75Rth(j–c) = 0.20°C/WFWDi part:3Per unit base =2Rth(j–c) = 0.28°C/W10–310–210–310–5235710–4235710–3EMITTER CURRENT IE (A)TIME (s)SWITCHING LOSS vs.COLLECTOR CURRENT(TYPICAL)1017SWITCHING LOSS vs.GATE RESISTANCE(TYPICAL)Conditions:VCC = 600V5VGE = ±15V3IC = 100ATj = 125°C2Inductive loadC snubber at bus10177532Esw(off)SWITCHING LOSS (mJ/pulse)102SWITCHING LOSS (mJ/pulse)532Esw(on)Esw(on) Esw(off)100753210–1110Conditions:VCC = 600VVGE = ±15VRG = 3.1ΩTj = 125°CInductive loadC snubber at bus2357102235710310001023571012357102COLLECTOR CURRENT IC (A)GATE RESISTANCE RG (Ω)RECOVERY LOSS vs. IE(TYPICAL)102RECOVERY LOSS (mJ/pulse)RECOVERY LOSS vs.GATE RESISTANCE(TYPICAL)10275RECOVERY LOSS (mJ/pulse)VCC = 600VVGE = ±15V3RG = 3.1ΩTj = 125°C2Inductive loadC snubber at bus10175327Conditions:532Err 1017532Conditions:VCC = 600VVGE = ±15VIE = 100ATj = 125°CInductive loadC snubber at busErr1001102357102235710310001023571012357102EMITTER CURRENT IE (A)GATE RESISTANCE RG (Ω)Jun. 2004
元器件交易网www.cecb2b.com
MITSUBISHI IGBT MODULES
CM100TL-24NF
HIGH POWER SWITCHING USE
GATE CHARGE CHARACTERISTICS(TYPICAL)20GATE-EMITTER VOLTAGE VGE (V)IC = 100AVCC = 400VVCC = 600V16128400200400600800GATE CHARGE QG (nC)Jun. 2004
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