Electrostatic discharge protection structures for

专利名称：Electrostatic discharge protection structures

for high speed technologies with mixed andultra-low voltage supplies

发明人：Mergens, Marcus,Verhaege, Koen,Armer,

John,Russ, Christian

申请号：EP11176446.0申请日：20020315公开号：EP2393177B1公开日：20151230

摘要：An electrostatic discharge (ESD) protection circuit (302) in a semiconductorintegrated circuit (IC) (100) having protected circuitry. In one embodiment, the ESDprotection circuit (302) includes a pad (104), adapted for connection to a protected circuitnode of the IC, and an ESD protection device (306), which is coupled between the pad andground (112). A diode turn-on device (308) is coupled in a forward conduction directionfrom the pad to a first gate (336) of the ESD protection device. In a second embodiment,the ESD protection circuit (2002) is an SCR having an anode (322) coupled to a first voltagesupply line, and a cathode coupled to ground. A parasitic capacitance (2004) is coupledbetween each the voltage supply line and the grounded cathode

申请人：SOFICS BVBA

地址：BE

国籍：BE

代理机构：Badel, Xavier Claude Yves

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