0.5–12 GHz Low NoiseGallium Arsenide FETTechnical Data
ATF-10136
Features
•Low Noise Figure:0.5 dB Typical at 4 GHz•Low Bias:
VDS = 2 V, IDS=␣20 mA•High Associated Gain:13.0 dB Typical at 4 GHz•High Output Power:
20.0 dBm Typical P1 dB at 4 GHz•Cost Effective CeramicMicrostrip Package•Tape-and Reel PackagingOption Available[1]
Description
The ATF-10136 is a high performancegallium arsenide Schottky-barrier-gate field effect transistor housed in acost effective microstrip package. Itspremium noise figure makes thisdevice appropriate for use in the firststage of low noise amplifiers operat-ing in the 0.5-12 GHz frequency range.This GaAs FET device has a nominal0.3 micron gate length using airbridgeinterconnects between drain fingers.Total gate periphery is 500 microns.Proven gold based metallizationsystems and nitride passivationassure a rugged, reliable device.36 micro-X Package
Electrical Specifications, TA = 25°C
SymbolNFO
Parameters and Test Conditions
Optimum Noise Figure: VDS = 2 V, IDS = 25 mA
f = 2.0 GHzf = 4.0 GHzf = 6.0 GHzf = 2.0 GHzf = 4.0 GHzf = 6.0 GHzf = 4.0 GHzf = 4.0 GHz
Units Min.dBdBdBdBdBdBdBmdBmmhomAV
7070-4.012.0
Typ. Max.0.40.50.816.513.011.020.012.0140130-1.3
180-0.50.6
GAGain @ NFO; VDS = 2 V, IDS = 25 mA
P1 dBG1 dBgmIDSSVP
Power Output @ 1 dB Gain CompressionVDS = 4 V, IDS = 70 mA
1 dB Compressed Gain: VDS = 4 V, IDS = 70 mATransconductance: VDS = 2 V, VGS = 0 VSaturated Drain Current: VDS = 2 V, VGS = 0 VPinchoff Voltage: VDS = 2 V, IDS = 1 mA
Note:
1.Refer to PACKAGING section “Tape-and-Reel Packaging for Surface Mount Semiconductors.”5-235965-8701E
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ATF-10136 Absolute Maximum Ratings
SymbolVDSVGSVGDIDSPTTCHTSTG
ParameterDrain-Source VoltageGate-Source VoltageGate-Drain VoltageDrain Current
Power Dissipation[2,3]Channel TemperatureStorage Temperature[4]UnitsVVVmAmW°C°C
AbsoluteMaximum[1]
+5-4-7IDSS430175-65 to +175
Notes:
1.Permanent damage may occur ifany of these limits are exceeded.2.TCASE TEMPERATURE = 25°C.3.Derate at 2.9 mW/°C forTCASE > 25°C.
4.Storage above +150°C may tarnishthe leads of this package making itdifficult to solder into a circuit.After a device has been solderedinto a circuit, it may be safelystored up to 175°C.
5.The small spot size of this tech-nique results in a higher, thoughmore accurate determination of θjcthan do alternate methods. SeeAPPLICATIONS PRIMER IIIA formore information.
Thermal Resistance:
Liquid Crystal Measurement:θjc = 350°C/W; TCH = 150°C1 µm Spot Size[5]
Part Number Ordering Information
Part NumberATF-10136-TR1ATF-10136-STR
Devices Per Reel
100010
Reel Size7\"STRIP
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”ATF-10136 Noise Parameters: VDS = 2 V, IDS = 25 mA
Freq.GHz0.51.02.04.06.08.0
NFOdB0.350.40.40.50.81.1
Γopt
Mag0.930.850.700.390.360.45
Ang122447126-170-100
RN/500.800.700.460.360.120.38
ATF-10136 Typical Performance, TA = 25°C
1815GA (dB)2.01.5NFO (dB)1.00.502.0NFOGA16GA (dB)14GA302520GAIN (dB)1510500.5
|S21|2MAGMSG12912101.5NFO (dB)61.0NFO0.500
10
20
30IDS (mA)
40
50
60
4.06.08.010.012.01.02.04.06.08.012.0FREQUENCY (GHz)FREQUENCY (GHz)
Figure 1. Optimum Noise Figure and Associated Gain vs. Frequency. VDS = 2V, IDS = 25 mA, TA = 25°C.Figure 2. Optimum Noise Figure and Associated Gain vs. IDS. VDS = 2V, f = 4.0 GHz.Figure 3. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VDS = 2 V, IDS = 25 mA.5-24
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Typical Scattering Parameters, Common Source, ZO = 50 Ω, TA=25°C, VDS=2V,IDS␣=␣25 mA
Freq.MHz0.51.02.03.04.05.06.07.08.09.010.011.012.0
S11
Mag..98.93.79.64.54.47.45.50.60.68.73.77.80
Ang.-18-33-66-94-120-1551621208761422614
dB14.514.313.312.211.110.19.28.06.44.93.62.01.0
S21Mag.5.325.194.644.073.603.202.882.512.091.751.521.261.12
Ang.16314711387613713-10-32-51-66-82-97
dB-34.0-28.4-22.6-19.2-17.3-15.5-14.3-13.9-13.6-13.6-13.7-13.8-14.0
S12Mag..020.038.074.110.137.167.193.203.210.209.207.205.200
S22
Ang.786759443113-2-19-36-46-58-73-82
Mag..35.36.30.27.22.16.08.16.32.44.51.54.54
Ang.-9-19-31-42-49-54-17454838342715
36 micro-X Package Dimensions
2.15(0.085)SOURCE4DRAIN30.508(0.020)2.11 (0.083) DIA.GATE1101SOURCE 1.45 ± 0.25(0.057 ± 0.010)2
2.54(0.100)0.15 ± 0.05(0.006 ± 0.002)0.56(0.022) 4.57 ± 0.250.180 ± 0.010Notes:1. Dimensions are in millimeters (inches)2. Tolerances: in .xxx = ± 0.005 mm .xx = ± 0.13 5-25
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