Low cost source drain elevation through poly amorp

专利名称：Low cost source drain elevation through

poly amorphizing implant technology

发明人：Yisuo Li,Francis Benistant,Kian Meng

Tee,King Jien Chui

申请号：US10752249申请日：20040106公开号：US07101743B2公开日：20060905

专利附图：

摘要：A method for forming elevated source/drain regions. A gate structure is formedover a substrate. The substrate comprised of silicon. We form a polysilicon layer

preferably using PVD or CVD over the gate structure and the substrate. A poly/Siinterface is formed between the polysilicon layer and the substrate. We perform apoly/Si interface amorphization implant to amorphize at least the poly/Si interface in theS/D areas and to from an amorphous region. We anneal the substrate to crystallize theamorphous region and the polysilicon layer over the amorphous region to form anelevated silicon region in the source/drain area. Next, source/drain regions in are formedin the elevated silicon regions and the substrate.

申请人：Yisuo Li,Francis Benistant,Kian Meng Tee,King Jien Chui

地址：Singapore SG,San Jose CA US,Singapore SG,Singapore SG

国籍：SG,US,SG,SG

代理人：William J. Stoffel

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