专利名称：Integrated circuits发明人：Terence E. Magee申请号：US06/661819申请日：19841017公开号：US04642667A公开日：19870210
摘要：A bipolar lateral transistor is formed in a highly doped p.sup. - -type well (13)the base contained in a lightly doped n.sup.- -type well (12) the collector in a very lightlydoped p.sup.-- -type substrate (11). The arrangement is such that the boundary of thecollector/base depletion region is distributed so that the non-depleted base region iswide below the emitter but very narrow at the surface. This defines a narrow active baseregion in the lateral emitter-collector path thus ensuring that the transistor operatespredominantly in its lateral rather than its vertical mode. The structure is compatible withconventional CMOS and NMOS processing techniques.
申请人：STANDARD TELEPHONES & CABLES
代理机构：Kerkam, Stowell, Kondracki, & Clarke
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