您好,欢迎来到尚车旅游网。
搜索
您的当前位置:首页Integrated circuits

Integrated circuits

来源:尚车旅游网
专利内容由知识产权出版社提供

专利名称:Integrated circuits发明人:Sanh D. Tang,Gordon Haller申请号:US11957013申请日:20071214公开号:US07687857B2公开日:20100330

专利附图:

摘要:Integrated circuits and methods of forming field effect transistors aredisclosed. In one aspect, an integrated circuit includes a semiconductor substratecomprising bulk semiconductive material. Electrically insulative material is received withinthe bulk semiconductive material. Semiconductor material is formed on the insulative

material. A field effect transistor is included and comprises a gate, a channel region, and apair of source/drain regions. In one implementation, one of the source/drain regions isformed in the semiconductor material, and the other of the source/drain regions isformed in the bulk semiconductive material. In one implementation, the electricallyinsulative material extends from beneath one of the source/drain regions to beneathonly a portion of the channel region. Other aspects and implementations, includingmethodical aspects, are disclosed.

申请人:Sanh D. Tang,Gordon Haller

地址:Boise ID US,Boise ID US

国籍:US,US

代理机构:Wells St. John P.S.

更多信息请下载全文后查看

因篇幅问题不能全部显示,请点此查看更多更全内容

Copyright © 2019- sceh.cn 版权所有 湘ICP备2023017654号-4

违法及侵权请联系:TEL:199 1889 7713 E-MAIL:2724546146@qq.com

本站由北京市万商天勤律师事务所王兴未律师提供法律服务