Integrated circuits

专利名称：Integrated circuits发明人：Sanh D. Tang,Gordon Haller申请号：US11957013申请日：20071214公开号：US07687857B2公开日：20100330

专利附图：

摘要：Integrated circuits and methods of forming field effect transistors aredisclosed. In one aspect, an integrated circuit includes a semiconductor substratecomprising bulk semiconductive material. Electrically insulative material is received withinthe bulk semiconductive material. Semiconductor material is formed on the insulative

material. A field effect transistor is included and comprises a gate, a channel region, and apair of source/drain regions. In one implementation, one of the source/drain regions isformed in the semiconductor material, and the other of the source/drain regions isformed in the bulk semiconductive material. In one implementation, the electricallyinsulative material extends from beneath one of the source/drain regions to beneathonly a portion of the channel region. Other aspects and implementations, includingmethodical aspects, are disclosed.

申请人：Sanh D. Tang,Gordon Haller

地址：Boise ID US,Boise ID US

国籍：US,US

代理机构：Wells St. John P.S.

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