专利名称:Integrated circuits发明人:Sanh D. Tang,Gordon Haller申请号:US11957013申请日:20071214公开号:US07687857B2公开日:20100330
专利附图:
摘要:Integrated circuits and methods of forming field effect transistors aredisclosed. In one aspect, an integrated circuit includes a semiconductor substratecomprising bulk semiconductive material. Electrically insulative material is received withinthe bulk semiconductive material. Semiconductor material is formed on the insulative
material. A field effect transistor is included and comprises a gate, a channel region, and apair of source/drain regions. In one implementation, one of the source/drain regions isformed in the semiconductor material, and the other of the source/drain regions isformed in the bulk semiconductive material. In one implementation, the electricallyinsulative material extends from beneath one of the source/drain regions to beneathonly a portion of the channel region. Other aspects and implementations, includingmethodical aspects, are disclosed.
申请人:Sanh D. Tang,Gordon Haller
地址:Boise ID US,Boise ID US
国籍:US,US
代理机构:Wells St. John P.S.
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