Vertical NAND flash memory array

专利名称：Vertical NAND flash memory array发明人：Leonard Forbes申请号：US10738556申请日：20031217公开号：US07148538B2公开日：20061212

专利附图：

摘要：Memory devices, arrays, and strings are described that facilitate the use ofvertical floating gate memory cells in NAND architecture memory strings, arrays, anddevices. NAND Flash memory strings, arrays, and devices in accordance with

embodiments of the present invention, include vertical Flash memory cells to form NAND

architecture memory cell strings and memory arrays. These vertical memory cell NANDarchitecture strings allow for an improved high density memory devices or arrays that cantake advantage of the feature sizes semiconductor fabrication processes are generallycapable of and still allow for appropriate device sizing for operational considerations.

申请人：Leonard Forbes

地址：Corvallis OR US

国籍：US

代理机构：Leffert Jay & Polglaze, P.A.

更多信息请下载全文后查看