Read only memory having localized reference bit li

专利名称：Read only memory having localized

reference bit lines

发明人：Robert L. Barry,John D. Chickanosky申请号：US08/660264申请日：19960607公开号：US05602788A公开日：19970211

摘要：A growable read only memory (ROM) provides improved performance over awide range of array sizes by incorporating a localized reference bitline that accuratelytracks changes in loading and variations in process parameters. The reference bitline isinput into one side of a differential sense amplifier while a selected data bitline is inputinto the other side. The reference bitline is precharged and includes two columns, a firstcolumn includes devices that are matched to memory cell devices wherein a device of theselected word line will be selected to discharge the referenced bitline. The secondcolumn includes a recessed oxide device corresponding to each memory cell in thecolumn. The combination of the two columns ensures that the reference bitline willdischarge at a predetermined rate that tracks the rate at which a selected contactprogrammed memory cell discharges.

申请人：INTERNATIONAL BUSINESS MACHINES CORPORATION

代理人：Floyd E. Anderson

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