专利名称：METHOD OF PREPARING AN ISOLATION
REGION IN A HIGH RESISTIVITY SILICON-ON-INSULATOR SUBSTRATE
发明人：Igor Peidous,Jeffrey L. Libbert申请号：US16352203申请日：20190313
公开号：US20190214294A1公开日：20190711
专利附图：
摘要：A multilayer composite structure and a method of preparing a multilayercomposite structure are provided. The multilayer composite structure comprises a
semiconductor handle substrate having a minimum bulk region resistivity of at leastabout 500 ohm-cm and an isolation region that impedes the transfer of charge carriersalong the surface of the handle substrate and reduces parasitic coupling between RFdevices.
申请人：GlobalWafers Co., Ltd.
地址：Hsinchu TW
国籍：TW
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容