Method of making transistor with strained sourced

专利名称：Method of making transistor with strained

source/drain

发明人：Yun-Hsiu Chen,Syun-Ming Jang申请号：US100599申请日：20040714公开号：US071152B2公开日：20061010

专利附图：

摘要：A method of fabricating a transistor comprises the steps of: forming a gateelectrode above a substrate made of a first semiconductor material having a first latticespacing, forming recesses in the semiconductor substrate at respective locations where a

source region and a drain region are to be formed, epitaxially growing a secondsemiconductor material having a second lattice spacing different from the first latticespacing in the recesses, and implanting a dopant in the second semiconductor materialafter the growing step.

申请人：Yun-Hsiu Chen,Syun-Ming Jang

地址：Hsin-Chu TW,Hsin-Chu TW

国籍：TW,TW

代理机构：Duane Morris LLP

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