High-frequency integrated circuit

专利名称：High-frequency integrated circuit发明人：Ishikawa, Youhei,Tanizaki, Toru,Nishida,

Niroshi

申请号：EP95113571.4申请日：19950829公开号：EP0700114A2公开日：19960306

专利附图：

摘要：A high-frequency integrated circuit which operates in a microwave band or in amillimeter wave band. The high-frequency integrated circuit has devices with a

nonradiative dielectric waveguide such as an oscillator, a circulator, etc., and a mount case

with a nonradiative dielectric waveguide in which these devices are mounted. Each of thedevices with a nonradiative dielectric waveguide has a couple of conductors, a dielectricstrip which is disposed between the conductors and propagates a high-frequencyelectromagnetic wave in a specified mode, a mounting surface which is formed on one ofthe conductors, and an end surface which is formed on an end of the conductors so as tobe vertical to a traveling direction of the electromagnetic wave propagated in thedielectric strip and on which an end of the dielectric strip is exposed. The devices with anonradiative dielectric waveguide are evaluated separately, and thereafter, the devicesare mounted in the mount case individually.

申请人：MURATA MANUFACTURING CO., LTD.

地址：26-10, Tenjin 2-chome Nagaokakyo-shi, Kyoto 617 JP

国籍：JP

代理机构：Herrmann-Trentepohl, Werner, Dipl.-Ing.

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