METHOD FOR DEPOSITING MICROCRYSTALLINE SILICON AND

专利名称：METHOD FOR DEPOSITING

MICROCRYSTALLINE SILICON ANDMONITOR DEVICE OF PLASMA ENHANCEDDEPOSITION

发明人：Chen-Chung Du,Sheng-Lang Lee,Muh-Wang

Liang,Jen-Rong Huang,Chia-Hao Chang

申请号：US12758698申请日：20100412

公开号：US20110136269A1公开日：20110609

专利附图：

摘要：A method for depositing a microcrystalline silicon film is disclosed, includingperforming an open loop and close loop plasma enhanced deposition process withoutand with modulating process parameters, respectively. A film is deposited by the openloop plasma enhanced deposition process till a required film crystallinity and thenperforming a closed loop plasma enhanced deposition process which monitors speciesplasma spectrum intensities SiH* and Hα and modulates process parameters of theplasma enhanced deposition process resulting in the species concentration stabilizationwhich controls the intensities variation of SiH* and Hα within an allowed range of a targetvalue for improving film depositing rate.

申请人：Chen-Chung Du,Sheng-Lang Lee,Muh-Wang Liang,Jen-Rong Huang,Chia-HaoChang

地址：Hsinchu City TW,Hsinchu County TW,Miaoli County TW,Hsinchu City TW,HsinchuCity TW

国籍：TW,TW,TW,TW,TW

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