专利名称：CDM ESD event simulation and remediation
thereof in application circuits
发明人：Choshu Ito,Li Lynn Ooi,William Loh申请号：US11349358申请日：20060207公开号：US07458044B2公开日：20081125
专利附图：
摘要：Methods and structure for improved simulation of CDM ESD events and forremediation of circuit designs correcting for previously inexplicable damage to corecircuits of an application circuit design caused by such events. Features and aspects
hereof note that such previously inexplicable damage to core circuits of an applicationcircuit design is caused by inductive coupling between the non-core circuits and the corecircuits of an application circuit design. Improved simulation techniques in accordance withfeatures and aspects hereof may predict where such inductive coupling may causedamage to core circuits. Other features and aspects hereof may alter an applicationcircuit design to provide remediation by automated insertion of additional buffer circuitryto core traces of the core circuitry that may be impacted by such inductive coupling.
申请人：Choshu Ito,Li Lynn Ooi,William Loh
地址：San Mateo CA US,San Jose CA US,Fremont CA US
国籍：US,US,US
代理机构：Duft Bornsen & Fishmar LLP
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