专利名称：Semiconductor device having a metal silicide
film and method of fabricating the same
发明人：SEKIGUCHI, MITSURU,YAMANAKA,
MICHINARI
申请号：EP97102797申请日：19970220公开号：EP0793271A3公开日：19981202
摘要：After formation of a connection hole or before deposition of an insulator film, asemiconductor device is placed onto a cathode of a plasma generator. A surface of ametal silicide film such as a silicide of titanium is exposed to a plasma of a nitrogen-containing gas at 550 degrees centigrade or less. As a result of such processing, a barriercompound layer, composed of a compound of nitrogen, oxygen, metal and silicon, isformed at a near-surface region of the metal silicide film of the titanium silicide film.Thereafter, while forming a buried layer from material superior in step coverage such asan Al-Ti compound and an aluminum alloy, reaction between the metal silicide film andthe buried layer in a later annealing treatment can be avoided without depositing abarrier metal such as a titanium nitride/nitride film in the connection hole. Accordingly,contact resistance, sheet resistance and junction leakage can be reduced and reliabilitycan be improved.
申请人：MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
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