Semiconductor device having a metal barrier layer

专利名称：Semiconductor device having a metal barrier

layer for a dielectric material having a highdielectric constant and a method ofmanufacture thereof

发明人：Glenn B. Alers,Sailesh M. Merchant,Pradip K.

Roy

申请号：US09481463申请日：20000111公开号：US003415B1公开日：20020611

专利附图：

摘要：The present invention provides a semiconductor device that has a metal barrierlayer for a dielectric material, which can be used in an integrated circuit, if so desired. Thesemiconductor device provides a capacitance to the integrated circuit and in a preferredembodiment comprises a first layer located on a surface of the integrated circuit. A metalbarrier layer is located on the first layer and is susceptible to oxidation by oxygen. A highK capacitor dielectric layer (i.e., a higher K than silicon dioxide) that contains oxygen, suchas tantalum pentoxide, is located over the metal barrier layer. The semiconductor devicefurther includes a first layer located over the high K capacitor dielectric layer.

申请人：AGERE SYSTEMS GUARDIAN CORP.

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