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ESD protection against charge coupling

来源:尚车旅游网
专利内容由知识产权出版社提供

专利名称:ESD protection against charge coupling发明人:Christopher A. Bennett,Taeghyun Kang申请号:US13348949申请日:20120112公开号:US08830639B2公开日:20140909

专利附图:

摘要:This document discusses among other things apparatus and methods forreducing ESD damage to buffer circuits. In an example, an output buffer can include anoutput, a first transistor configured to couple the output to a high logic supply rail, asecond transistor configured to couple the output node to a low logic supply rail, pre-

driver logic configured to drive a gate of the first transistor and a gate of the secondtransistor, and a first resistor configured to reduce electrostatic discharge (ESD) inducedcurrent between the first transistor and the pre-driver logic.

申请人:Christopher A. Bennett,Taeghyun Kang

地址:Topsham ME US,Scarborough ME US

国籍:US,US

代理机构:Schwegman, Lundberg & Woessner, P.A.

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