IXFN43N60资料

ADVANCE INFORMATIONHiPerFETTMPower MOSFETSingle MOSFET Die VDSSID2543A40A43A40ARDS(on) trr 0.13W 0.15W 0.13W 0.15W200ns200ns200ns200nsIXFN 43N60IXFN 40N60IXFK 43N60IXFK 40N60600V600V600V600VTO-264 AA (IXFK)SymbolTest ConditionsMaximum Ratings IXFK IXFK43N6040N60VDSSVDGR󰀁VGSVGSMID25IDM󰀂IAREARdv/dtPDTJTJMTstgTLVISOLMdWeight1.6 mm (0.063 in) from case for 10 s50/60 Hz, RMSIISOL £ 1 mAt = 1 mint = 1 sTJ= 25°C to 150°CTJ= 25°C to 150°CContinuousTransientTC= 25°CTC = 25°CTC= 25°CTC= 25°CIS£ IDM, di/dt £ 100 A/ms, VDD £ VDSSTJ£ 150°C, RG = 2 WTC= 25°C4317243605560-55 ... +150150-55 ... +150 300N/AN/A0.9/6N/A10N/A25003000600600±20±3040160404317243605600IXFN43N60IXFN40N60 V V V V4016040AAAmJV/nsW°C°C°C°CV~V~G = GateS = SourceDGDS600600±20±30D (TAB)miniBLOC, SOT-227 B (IXFN) E153432SGSD = DrainTAB = DrainEither Source terminal at miniBLOC can be usedas Main or Kelvin SourceMounting torqueTerminal connection torque1.5/13Nm/lb.in.1.5/13Nm/lb.in.30 gFeatures·International standard packages·Encapsulating epoxy meetsUL 94 V-0, flammability classification·miniBLOC with Aluminium nitrideisolation·Low RDS (on) HDMOSTM process·Rugged polysilicon gate cell structure·Unclamped Inductive Switching (UIS)rated·Low package inductance·Fast intrinsic Rectifier

Applications

·DC-DC converters

·Synchronous rectification·Battery chargers

·Switched-mode and resonant-modepower supplies·DC choppers

·Temperature and lighting controls·Low voltage relaysAdvantages·Easy to mount·Space savings·High power density

SymbolTest Conditions

(TJ = 25°C, unless otherwise specified)VDSSVGH(th)IGSSIDSSRDS(on)

VGS= 0 V, ID = 3mAVDS = VGS, ID = 8mAVGS= ±20 VGE = 0VDS= 0.8 • VDSS VVGS= 0 V

VGS= 10 V, ID = 0.5 • ID25Pulse test, t £ 300 ms,duty cycle d £ 2 %

TJ = 25 °CTJ = 125 °C43N6040N60

Characteristic ValuesMin.Max.6002

4±200

VVnA

400 mA2mA0.13 W0.15 W

IXYS reserves the right to change limits, test conditions, and dimensions.97503 A(7/97)

© 2000 IXYS All rights reserved

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IXFK43N60IXFK40N60SymbolTest Conditions

(TJ = 25°C, unless otherwise specified)gfsCissCossCrsstd(on)trtd(off)tfQg(on)QgsQgdRthJCRthCKRthJCRthCK

TO-264 AATO-264 AA

miniBLOC, SOT-227 BminiBLOC, SOT-227 B

0.050.15

0.21

VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25VGS= 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25RG= 1 Ω (External),VGS= 0 V, VDS = 25 V, f = 1 MHzVDS= 10 V; ID = 0.5 • ID25, pulse test

Characteristic ValuesMin.Typ.Max.

TBDTBDTBDTBDTBDTBDTBDTBDTBDTBDTBD

0.22

SpFpFpFnsnsnsnsnCnCnCK/WK/WK/WK/W

Dim.AA1A2bb1b2cDEeJKLL1PQQ1RR1STIXFN43N60IXFN40N60 TO-264 AA OutlineMillimeterMin.Max.4.825.132.542.892.002.101.121.422.392.692.903.090.530.8325.9126.1619.8119.965.46 BSC0.000.250.000.2520.3220.832.292.593.173.666.076.278.388.693.814.321.782.296.046.301.571.83InchesMin.Max..190.202.100.114.079.083.044.056.094.106.114.122.021.0331.0201.030.780.786.215 BSC.000.010.000.010.800.820.090.102.125.144.239.247.330.342.150.170.070.090.238.248.062.072Source-Drain Diode

(TJ = 25°C, unless otherwise specified)SymbolTest ConditionsISISMVSDtrrQRMIRM

Notes: 1. 2.

VGS= 0

Repetitive;

pulse width limited by TJM

43N60 40N60 43N60 40N60

Characteristic ValuesMin.Typ.Max.

43401721601.5

TBDTBDTBD

AAAAVnsµCA

miniBLOC, SOT-227 BIF = 100 A, VGS = 0 V,

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % IF = 50 A, -di/dt = 100 A/µs, VR = 100 VRGS = 1 MΩ

Pulse width limited by TJM.

M4 screws (4x) suppliedDim.ABCDEFGHJKLMNOPQRSTUMillimeterMin.Max.31.507.804.094.094.0914.9130.1238.0011.688.920.7612.6025.151.984.9526.543.944.7224.59-0.0531.888.204.294.294.2915.1130.3038.2312.229.600.8412.8525.422.135.9726.904.424.8525.070.1InchesMin.Max.1.2400.3070.1610.1610.1610.5871.1861.4960.4600.3510.0300.4960.9900.0780.1951.0450.1550.1860.968-0.0021.2550.3230.1690.1690.1690.5951.1931.5050.4810.3780.0330.5061.0010.0840.2351.0590.1740.1910.9870.004© 2000 IXYS All rights reserved

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:4,835,5924,881,1065,017,5085,049,9615,187,1175,486,7154,850,0724,931,8445,034,7965,063,3075,237,4815,381,025

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