IGBT-module

专利名称：IGBT-module

发明人：Mori, Mutsuhiro,Saito, Ryuichi,Kimura, Shin,

c/o Hitachi, Ltd. Intellectual PropertyGroup,Nakata, Kiyoshi,Saitoo, Syuuji,Horie,Akira,Koike, Yoshihiko,Sekine, Shigeki

申请号：EP07007832.4申请日：19920917公开号：EP180A3公开日：20081022

专利附图：

摘要：An IGBT module including a plurality of IGBT single modules each having a

plurality of IGBT chips (31a, 31b), a diode chip (32a, 32b), an emitter terminal (E1; E2) and acollector terminal (C1; C2), these being disposed on one surface of an insulation plate(11a; 11b) through electrode plates (12a, 12b), a metal substrate (20) mounting theisolation plates (11a, 11b) of the plurality of IGBT single modules on one surface and aresin case (50) bonded on the surface of said metal substrate (20) and incorporating saidIGBT single module. According to the invention the emitter terminals (E1, E2) and thecollector terminals (C1, C2) of said plurality of IGBT single modules are exposed on anupper surface of said resin case (50), the emitter terminals (E1, E2) are disposed side byside on a straight line parallel with and near the front edge of said metal substrate (20),the collector terminals (C1) are disposed side by side on a straight line parallel with thestraight line on which said emitter terminals (E1; E2) are disposed, and at least oneprotruding part (21a) is formed on the upper surface of said resin case (50) for delimitingsaid emitter terminals (E1, E2) from said collector terminals (C1, C2).

申请人：Hitachi, Ltd.

地址：6-6, Marunouchi 1-chome Chiyoda-ku Tokyo 100-8280 JP

国籍：JP

代理机构：Beetz & Partner

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