专利名称：Method for fabricating a small area of
contact between electrodes
发明人：Brent Gilgen申请号：US096532申请日：20000831公开号：US06287887B1公开日：20010911
专利附图：
摘要：An electrode structure for use in a chalcogenide memory is disclosed. Theelectrode has a substantially frusto-conical shape, and is preferably formed by undercutetching a polysilicon layer beneath an oxide pattern. With this structure, improved
current densities through the chalcogenide material can be achieved.
申请人：MICRON TECHNOLOGY, INC.
代理机构：Dickstein Shapiro Morin & Oshinsky, LLP
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