ETCH VARIATION TOLERANT OPTIMIZATION

专利名称：ETCH VARIATION TOLERANT

OPTIMIZATION

发明人：Xiaofeng LIU申请号：US153140申请日：20161214

公开号：US20170139320A1公开日：20170518

专利附图：

摘要：Disclosed herein is a computer-implemented method to improve a lithographicprocess for imaging a portion of a design layout onto a substrate using a lithographicprojection apparatus and for transferring the imaged portion of the design layout to the

substrate by an etching process, which includes the following steps: determining a valueof at least one evaluation point of the lithographic process for each of a plurality ofvariations of the etching process; computing a multi-variable cost function of a pluralityof design variables that are characteristics of the lithographic process, wherein the multi-variable cost function is a function of deviation from the determined values of the at leastone evaluation point; and reconfiguring the characteristics of the lithographic process byadjusting the design variables until a termination condition is satisfied. This method mayreduce the need of repeated adjustment to the lithographic process when the etchingprocess varies.

申请人：ASML Netherlands B.V.

地址：Veldhoven NL

国籍：NL

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