Plasma processing apparatus

专利名称：Plasma processing apparatus

发明人：Tadahiro Ohmi,Masaki Hirayama,Shigetoshi

Sugawa,Tetsuya Goto

申请号：US11488059申请日：20060718

公开号：US200602116A1公开日：20061228

专利附图：

摘要：A plasma processing apparatus comprises a processing vessel defined by anouter wall and having a stage for holding a substrate to be processed, an evacuationsystem coupled to the processing vessel, a plasma gas supply part for supplying plasma

gas to an interior of the processing vessel, a microwave antenna provided on the

processing vessel in correspondence to the substrate to be processed, and a process gassupply part provided between the substrate to be processed on the stage and theplasma gas supply part so as to face the substrate to be processed on the stage, whereinthe process gas supply part comprises a plurality of first apertures for passing throughplasma formed in the interior of the processing vessel, a process gas passage capable ofconnecting to a process gas source, a plurality of second apertures in communicationwith the process gas passage and a diffusion part provided opposite to the secondaperture for diffusing process gas released from the second aperture.

申请人：Tadahiro Ohmi,Masaki Hirayama,Shigetoshi Sugawa,Tetsuya Goto

地址：Sendai-Shi JP,Sendai-Shi JP,Sendai-Shi JP,Sendai-Shi JP

国籍：JP,JP,JP,JP

更多信息请下载全文后查看