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OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR P

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专利名称:OPTOELECTRONIC SEMICONDUCTOR CHIP

AND METHOD FOR PRODUCING SAME

发明人:BERGBAUER, WERNER,HOEPPEL,

LUTZ,DRECHSEL, PHILIPP,KOELPER,

CHRISTOPHER,STRASSBURG, MARTIN,RODE,PATRICK

申请号:EP11743182.5申请日:20110429公开号:EP2572384A1公开日:20130327

摘要:The invention relates to an optoelectronic semiconductor chip (10), which has astack (2) of semiconductor layers and a radiation outlet surface or radiation inlet surface(3). The stack (2) of semiconductor layers comprises an active layer (2a), which is suitablefor producing or receiving electromagnetic radiation. A plurality of nanostructures (4)that at least partially have at least one sub-structure (41, 42) is arranged in the stack (2)of semiconductor layers and/or on the radiation outlet surface or radiation inlet surface(3). The invention further relates to a method for producing such an optoelectronicsemiconductor chip (10).

申请人:OSRAM OPTO SEMICONDUCTORS GMBH

地址:Leibnizstrasse 4 93055 Regensburg DE

国籍:DE

代理机构:Epping - Hermann - Fischer

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