专利名称：Method of forming a metal wiring in a
semiconductor device
发明人：Sung Gyu Pyo申请号：US09874505申请日：20010605
公开号：US20020009884A1公开日：20020124
摘要：A method of forming a metal wiring in a semiconductor device. A copper wiringis formed by means of CECVD method by which a chemical enhancer layer is utilized forincreasing the deposition speed of copper. The damascene pattern is filled by means ofMOCVD method using a copper precursor in order to increase the deposition speed. Thechemical enhancer layer rises to the surface of copper after deposition of copper by aCECVD method and then the relatively high resistivity chemical enhancer layer that hasrisen to the surface of copper by plasma process is removed. Therefore, the ultra-finedamascene pattern can be rapidly filled with copper without increasing the resistance ofthe copper wiring.
申请人：PYO SUNG GYU
更多信息请下载全文后查看
因篇幅问题不能全部显示，请点此查看更多更全内容